IRFN350

更新时间： 2024-11-19 22:24:07

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
6页	183K
描述
POWER MOSFET N-CHANNEL(BVdss=400V, Rds(on)=0.315ohm, Id=14A)

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IRFN350 数据手册

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Provisional Data Sheet No. PD-9.1551

HEXFET^®POWER MOSFET

IRFN350

N-CHANNEL

Product Summary

400 Volt, 0.315Ω HEXFET

Part Number

BVDSS

RDS(on)

HEXFETtechnology is the key to International Rectifier’s

advanced line of power MOSFET transistors.The effi-

cient geometry achieves very low on-stateresistancecom-

binedwithhightransconductance.

IRFN350

400V

0.315Ω

14A

Features:

HEXFET transistors also feature all of the well-establish

advantages of MOSFETs, such as voltage control, very

fast switching, ease of paralleling and electrical param-

eter temperature stability. They are well-suited for appli-

cations such as switching power supplies, motor controls,

inverters, choppers, audio amplifiers, and high energy

pulse circuits.

■ Avalanche Energy Rating

■ Dynamic dv/dt Rating

■ Simple Drive Requirements

■ Ease of Paralleling

■ Hermetically Sealed

■ Surface Mount

■ Light-weight

The Surface Mount Device (SMD-1) package represents

another step in the continual evolution of surface mount

technology. The SMD-1 will give designers the extra flex-

ibility they need to increase circuit board density. Inter-

national Rectifier has engineered the SMD-1 package to

meet the specific needs of the power market by increas-

ing the size of the termination pads, thereby enhancing

thermal and electrical performance.

Absolute Maximum Ratings

Parameter

= 10V, T = 25°C Continuous Drain Current

IRFN350

Units

@ V

= 10V, T = 100°C Continuous Drain Current

Pulsed Drain Current ➀

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

@ T = 25°C

150

1.2

W/K ➄

±20

Single Pulse Avalanche Energy ➁

Avalanche Current ➀

700

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➂

Operating Junction

dv/dt

4.0

V/ns

-55 to 150

^oC

Storage Temperature Range

STG

(for 5 seconds)

2.6 (typical)

Package Mounting Surface Temperature

Weight

300

To Order

12 3 4 5 6

中文翻译

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IRFN350 替代型号

型号	品牌	替代类型	描述	数据表
JANTXV2N7227	INFINEON	类似代替	POWER MOSFET THRU-HOLE (TO-254AA)
IRFM350	INFINEON	类似代替	POWER MOSFET THRU-HOLE (TO-254AA)
2N7227	MICROSEMI	功能相似	N-CHANNEL MOSFET

与IRFN350相关器件

型号	品牌	获取价格	描述	数据表
IRFN350PBF	INFINEON	获取价格	Power Field-Effect Transistor, 14A I(D), 400V, 0.415ohm, 1-Element, N-Channel, Silicon, Me
IRFN3710	INFINEON	获取价格	TRANSISTOR N-CHANNEL(BVdss=100V, Rds(on)=0.028ohm, Id=45A)
IRFN3710	SEME-LAB	获取价格	N–CHANNEL POWER MOSFET
IRFN3710PBF	INFINEON	获取价格	Power Field-Effect Transistor, 45A I(D), 100V, 0.032ohm, 1-Element, N-Channel, Silicon, Me
IRFN440	INFINEON	获取价格	POWER MOSFET N-CHANNEL(BVdss=500V, Rds(on)=0.85ohm, Id=8.0A)
IRFN450	INFINEON	获取价格	POWER MOSFET N-CHANNEL(BVdss=500V, Rds(on)=0.415ohm, Id=12A)
IRFN5210	SEME-LAB	获取价格	P-CHANNEL POWER MOSFET
IRFN5210		获取价格	P-Channel Power MOSFET
IRFN9034	INFINEON	获取价格	Power Field-Effect Transistor, 12A I(D), 60V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal
IRFN9034PBF	INFINEON	获取价格	Power Field-Effect Transistor, 12A I(D), 60V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal

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