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2N7227 PDF预览

2N7227

更新时间: 2024-11-24 07:29:15
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
2页 98K
描述
N-CHANNEL MOSFET

2N7227 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-254AA包装说明:FLANGE MOUNT, S-CSFM-P3
针数:3Reach Compliance Code:compliant
HTS代码:8541.29.00.95风险等级:5.11
其他特性:HIGH RELIABILITY外壳连接:ISOLATED
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:400 V
最大漏极电流 (Abs) (ID):14 A最大漏极电流 (ID):14 A
最大漏源导通电阻:0.415 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-254AAJESD-30 代码:S-CSFM-P3
JESD-609代码:e4元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:SQUARE
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):150 W
最大脉冲漏极电流 (IDM):56 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Gold (Au) - with Nickel (Ni) barrier端子形式:PIN/PEG
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

2N7227 数据手册

 浏览型号2N7227的Datasheet PDF文件第2页 
TECHNICAL DATA SHEET  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803  
Website: http: //www.microsemi.com  
N-CHANNEL MOSFET  
Qualified per MIL-PRF-19500/592  
DEVICES  
LEVELS  
JAN  
2N7227 2N7227U  
JANTX  
JANTXV  
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)  
Parameters / Test Conditions  
Drain – Source Voltage  
Symbol  
VDS  
Value  
400  
Unit  
Vdc  
Vdc  
Gate – Source Voltage  
VGS  
± 20  
Continuous Drain Current  
ID1  
ID2  
Ptl  
14.0  
9.0  
Adc  
Adc  
W
TC = +25°C  
TC = +100°C  
TC = +25°C  
Continuous Drain Current  
Max. Power Dissipation  
150 (1)  
Drain to Source On State Resistance  
Operating & Storage Temperature  
Rds(on)  
0.315 (2)  
Ω
TO-254AA  
Top, Tstg  
-55 to +150  
°C  
Note: (1) Derated Linearly by 1.2 W/°C for TC > +25°C  
(2) VGS = 10Vdc, ID = 9A  
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)  
Parameters / Test Conditions  
Symbol  
Min.  
Max.  
Unit  
Drain-Source Breakdown Voltage  
VGS = 0V, ID = 1mAdc  
V(BR)DSS  
400  
Vdc  
Gate-Source Voltage (Threshold)  
V
DS VGS, ID = 0.25mA  
VDS VGS, ID = 0.25mA, Tj = +125°C  
DS VGS, ID = 0.25mA, Tj = -55°C  
VGS(th)1  
VGS(th)2  
VGS(th)3  
2.0  
1.0  
4.0  
5.0  
Vdc  
V
Gate Current  
GS = ±20V, VDS = 0V  
VGS = ±20V, VDS = 0V, Tj = +125°C  
V
IGSS1  
IGSS2  
±100  
±200  
nAdc  
U-PKG (U3)  
TO-276AB  
Drain Current  
VGS = 0V, VDS = 320V  
IDSS1  
IDSS2  
25  
0.25  
µAdc  
mAdc  
VGS = 0V, VDS = 320V, Tj = +125°C  
Static Drain-Source On-State Resistance  
Ω
Ω
V
GS = 10V, ID = 9.0A pulsed  
rDS(on)1  
rDS(on)2  
0.315  
0.415  
VGS = 10V, ID = 14.0A pulsed  
Tj = +125°C  
VGS = 10V, ID = 9.0A pulsed  
rDS(on)3  
VSD  
0.68  
1.7  
Ω
Diode Forward Voltage  
VGS = 0V, ID = 14A pulsed  
Vdc  
T4-LDS-0050 Rev. 1 (072808)  
Page 1 of 2  

2N7227 替代型号

型号 品牌 替代类型 描述 数据表
JANTXV2N7227 MICROSEMI

完全替代

N-CHANNEL MOSFET Qualified per MIL-PRF-19500/592
JANTXV2N7227U MICROSEMI

类似代替

Power Field-Effect Transistor, 14A I(D), 400V, 0.415ohm, 1-Element, N-Channel, Silicon, Me
JANTX2N7227 MICROSEMI

类似代替

N-CHANNEL MOSFET Qualified per MIL-PRF-19500/592

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