TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
N-CHANNEL MOSFET
Qualified per MIL-PRF-19500/592
DEVICES
LEVELS
2N7228
2N7228U
JAN
JANTX
JANTXV
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Drain – Source Voltage
Symbol
VDS
Value
500
Unit
Vdc
Vdc
Gate – Source Voltage
VGS
± 20
Continuous Drain Current
ID1
ID2
Ptl
12.0
8.0
Adc
Adc
W
TC = +25°C
TC = +100°C
TC = +25°C
Continuous Drain Current
Max. Power Dissipation
150 (1)
TO-254AA
Drain to Source On State Resistance
Operating & Storage Temperature
Rds(on)
0.415 (2)
Ω
Top, Tstg
-55 to +150
°C
Note: (1) Derated Linearly by 1.2 W/°C for TC > +25°C
(2) VGS = 10Vdc, ID = 8A
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Drain-Source Breakdown Voltage
V(BR)DSS
500
Vdc
V
GS = 0V, ID = 1mAdc
Gate-Source Voltage (Threshold)
VDS ≥ VGS, ID = 0.25mA
VGS(th)1
VGS(th)2
VGS(th)3
2.0
1.0
4.0
5.0
Vdc
V
V
DS ≥ VGS, ID = 0.25mA, Tj = +125°C
DS ≥ VGS, ID = 0.25mA, Tj = -55°C
U-PKG (U3)
TO-276AB
Gate Current
GS = ±20V, VDS = 0V
VGS = ±20V, VDS = 0V, Tj = +125°C
V
IGSS1
IGSS2
±100
±200
nAdc
Drain Current
V
GS = 0V, VDS = 400V
IDSS1
IDSS2
25
0.25
µAdc
mAdc
VGS = 0V, VDS = 400V, Tj = +125°C
Static Drain-Source On-State Resistance
Ω
Ω
V
GS = 10V, ID = 8.0A pulsed
rDS(on)1
rDS(on)2
0.415
0.515
VGS = 10V, ID = 12.0A pulsed
Tj = +125°C
V
GS = 10V, ID = 8.0A pulsed
rDS(on)3
VSD
0.90
1.7
Ω
Diode Forward Voltage
V
Vdc
GS = 0V, ID = 12A pulsed
T4-LDS-0051 Rev. 2 (101154)
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