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IRFM350 PDF预览

IRFM350

更新时间: 2024-11-05 04:23:23
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
7页 203K
描述
POWER MOSFET THRU-HOLE (TO-254AA)

IRFM350 技术参数

是否Rohs认证: 不符合生命周期:Active
Reach Compliance Code:compliant风险等级:5.14
其他特性:HIGH RELIABILITY雪崩能效等级(Eas):700 mJ
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:400 V最大漏极电流 (Abs) (ID):14 A
最大漏极电流 (ID):14 A最大漏源导通电阻:0.415 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-254AA
JESD-30 代码:S-MSFM-P3JESD-609代码:e0
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
最低工作温度:-55 °C封装主体材料:METAL
封装形状:SQUARE封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):150 W最大脉冲漏极电流 (IDM):56 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:PIN/PEG端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRFM350 数据手册

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PD - 90491D  
IRFM350  
JANTX2N7227  
JANTXV2N7227  
POWER MOSFET  
THRU-HOLE (TO-254AA)  
REF:MIL-PRF-19500/592  
400V, N-CHANNEL  
HEXFET® MOSFETTECHNOLOGY  
Product Summary  
Part Number  
RDS(on)  
ID  
IRFM350  
0.315 Ω  
14A  
HEXFET® MOSFET technology is the key to International  
Rectifier’s advanced line of power MOSFET transistors. The  
efficient geometry design achieves very low on-state re-  
sistance combined with high transconductance. HEXFET  
transistors also feature all of the well-established advan-  
tages of MOSFETs, such as voltage control, very fast switch-  
ing, ease of paralleling and electrical parameter temperature  
stability. They are well-suited for applications such as switch-  
ing power supplies, motor controls, inverters, choppers,  
audio amplifiers, high energy pulse circuits, and virtually  
any application where high reliability is required. The  
HEXFET transistor’s totally isolated package eliminates the  
need for additional isolating material between the device  
and the heatsink. This improves thermal efficiency and  
reduces drain capacitance.  
TO-254AA  
Features:  
n
n
n
n
n
n
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Electrically Isolated  
Dynamic dv/dt Rating  
Light-weight  
Absolute Maximum Ratings  
Parameter  
Units  
I
@ V  
@ V  
= 10V, T = 25°C  
Continuous Drain Current  
14  
9.0  
D
GS  
C
A
I
= 10V, T = 100°C Continuous Drain Current  
D
GS  
C
I
Pulsed Drain Current  
Max. Power Dissipation  
56  
DM  
@ T = 25°C  
P
150  
1.2  
W
W/°C  
V
D
C
Linear Derating Factor  
V
Gate-to-Source Voltage  
±20  
700  
14  
GS  
E
Single Pulse Avalanche Energy ➀  
Avalanche Current ➀  
mJ  
A
AS  
I
AR  
E
Repetitive Avalanche Energy ➀  
Peak Diode Recovery dv/dt ➀  
Operating Junction  
15  
mJ  
V/ns  
AR  
dv/dt  
4.0  
T
-55 to 150  
J
T
Storage Temperature Range  
oC  
g
STG  
300 ( 0.063 in.(1.6mm) from case for 10s)  
9.3 (Typical)  
Lead Temperature  
Weight  
For footnotes refer to the last page  
www.irf.com  
1
1/29/02  

IRFM350 替代型号

型号 品牌 替代类型 描述 数据表
JANTXV2N7227U INFINEON

完全替代

400V Single N-Channel Hi-Rel MOSFET in a SMD-1 package - A JANTXV2N7227U with Hermetic Pac
JANTXV2N7227 INFINEON

完全替代

POWER MOSFET THRU-HOLE (TO-254AA)
JANTX2N7227 INFINEON

完全替代

POWER MOSFET THRU-HOLE (TO-254AA)

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