Datasheet > IRFM360SCX

IRFM360SCX

更新时间： 2023-12-06 20:12:19

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
7页	248K
描述
400V Single N-Channel Hi-Rel MOSFET in a TO-254AA package - Screening Level TX

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IRFM360SCX 数据手册

PD-90712C

IRFM360

400V, N-CHANNEL

POWER MOSFET

THRU-HOLE (TO-254AA)

HEXFET^®MOSFET TECHNOLOGY

Product Summary

Part Number

RDS(on)

IRFM360

0.20 Ω

23A

HEXFET^®MOSFET technology is the key to International

Rectifier’s advanced line of power MOSFET transistors.

The efficient geometry design achieves very low on-state

resistance combined with high transconductance. HEXFET

transistors also feature all of the well-established advantages

of MOSFETs, such as voltage control, very fast switching,

ease of paralleling and electrical parameter temperature

stability. They are well-suited for applications such as

switching power supplies, motor controls, inverters,

choppers, audio amplifiers, high energy pulse circuits, and

virtually any application where high reliability is required.

The HEXFET transistor’s totally isolated package eliminates

the need for additional isolating material between the device

and the heatsink. This improves thermal efficiency and

reduces drain capacitance.

TO-254AA

Features:

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Electrically Isolated

Dynamic dv/dt Rating

Light-weight

Absolute Maximum Ratings

Parameter

Units

@ V

= 10V, T = 25°C

Continuous Drain Current

= 10V, T = 100°C Continuous Drain Current

Pulsed Drain Current À

Max. Power Dissipation

@ T = 25°C

250

2.0

W/°C

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy Á

Avalanche Current À

±20

980

Repetitive Avalanche Energy À

Peak Diode Recovery dv/dt Â

Operating Junction

V/ns

dv/dt

4.0

-55 to 150

Storage Temperature Range

°C

STG

300 ( 0.063 in.(1.6mm) from case for 10s)

9.3 (Typical)

Lead Temperature

Weight

For footnotes refer to the last page

www.irf.com

05/12/15

12 3 4 5 6 7

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与IRFM360SCX相关器件

型号	品牌	获取价格	描述	数据表
IRFM360U	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 400V V(BR)DSS \| 23A I(D) \| TO-254VAR
IRFM440	INFINEON	获取价格	POWER MOSFET THRU-HOLE (TO-254AA)
IRFM440D	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 500V V(BR)DSS \| 8A I(D) \| TO-254VAR
IRFM440DPBF	INFINEON	获取价格	Power Field-Effect Transistor, 8A I(D), 500V, 0.95ohm, 1-Element, N-Channel, Silicon, Meta
IRFM440PBF	INFINEON	获取价格	Power Field-Effect Transistor, 8A I(D), 500V, 0.95ohm, 1-Element, N-Channel, Silicon, Meta
IRFM440U	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 500V V(BR)DSS \| 8A I(D) \| TO-254VAR
IRFM440UPBF	INFINEON	获取价格	Power Field-Effect Transistor, 8A I(D), 500V, 0.95ohm, 1-Element, N-Channel, Silicon, Meta
IRFM450	INFINEON	获取价格	POWER MOSFET THRU-HOLE (TO-254AA)
IRFM450	SEME-LAB	获取价格	N-CHANNEL POWER MOSFET
IRFM450	TEMIC	获取价格	Power Field-Effect Transistor, 13A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Meta