IRFM450DPBF

更新时间： 2024-11-18 13:08:47

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲局域网
页数	文件大小	规格书
7页	181K
描述
Power Field-Effect Transistor, 12A I(D), 500V, 0.515ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254AA, 3 PIN

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IRFM450DPBF 数据手册

PD - 90493F

IRFM450

JANTX2N7228

JANTXV2N7228

POWER MOSFET

THRU-HOLE (TO-254AA)

REF: MIL-PRF-19500/592

500V, N-CHANNEL

HEXFET^®MOSFET TECHNOLOGY

Product Summary

Part Number

RDS(on)

IRFM450

0.415 Ω

12A

HEXFET^®MOSFET technology is the key to International

Rectifier’s advanced line of power MOSFET transistors. The

efficient geometry design achieves very low on-state re-

sistance combined with high transconductance. HEXFET

transistors also feature all of the well-established advan-

tages of MOSFETs, such as voltage control, very fast switch-

ing, ease of paralleling and electrical parameter temperature

stability. They are well-suited for applications such as switch-

ing power supplies, motor controls, inverters, choppers,

audio amplifiers, high energy pulse circuits, and virtually

any application where high reliability is required. The

HEXFET transistor’s totally isolated package eliminates the

need for additional isolating material between the device

and the heatsink. This improves thermal efficiency and

reduces drain capacitance.

TO-254AA

Features:

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Electrically Isolated

Dynamic dv/dt Rating

n Light-weight

Absolute Maximum Ratings

Parameter

Units

@ V

= 10V, T = 25°C

Continuous Drain Current

8.0

= 10V, T = 100°C Continuous Drain Current

Pulsed Drain Current ➀

Max. Power Dissipation

@ T = 25°C

150

1.2

±20

750

W/°C

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy ➀

Avalanche Current ➀

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➀

Operating Junction

V/ns

dv/dt

3.5

-55 to 150

Storage Temperature Range

^oC

STG

300 ( 0.063 in.(1.6mm) from case for 10s)

9.3 (Typical)

Lead Temperature

Weight

For footnotes refer to the last page

www.irf.com

02/05/02

12 3 4 5 6 7

中文翻译

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与IRFM450DPBF相关器件

型号	品牌	获取价格	描述	数据表
IRFM450PBF	INFINEON	获取价格	Power Field-Effect Transistor, 12A I(D), 500V, 0.515ohm, 1-Element, N-Channel, Silicon, Me
IRFM450U	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 500V V(BR)DSS \| 12A I(D) \| TO-254VAR
IRFM460	INFINEON	获取价格	POWER MOSFET THRU-HOLE (TO-254AA)
IRFM460D	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 500V V(BR)DSS \| 19A I(D) \| TO-254VAR
IRFM460SCV	INFINEON	获取价格	500V Single N-Channel Hi-Rel MOSFET in a TO-254AA package - Screening Level TXV
IRFM460SCX	INFINEON	获取价格	500V Single N-Channel Hi-Rel MOSFET in a TO-254AA package - Screening Level TX
IRFM460U	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 500V V(BR)DSS \| 19A I(D) \| TO-254VAR
IRFM5210	SEME-LAB	获取价格	P?CHANNEL MOSFET
IRFM540	SEME-LAB	获取价格	N-CHANNEL POWER MOSFET
IRFM8240	INFINEON	获取价格	POWER MOSFET THRU-HOLE (TO-254AA)

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