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JANTX2N7227 PDF预览

JANTX2N7227

更新时间： 2024-11-05 04:58:59
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管开关脉冲局域网
页数 文件大小 规格书
7页 203K
描述
POWER MOSFET THRU-HOLE (TO-254AA)

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中文翻译

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JANTX2N7227 技术参数

是否Rohs认证： 不符合生命周期：Active
包装说明：TO-254AA, 3 PINReach Compliance Code：compliant
风险等级：5.15其他特性：HIGH RELIABILITY
雪崩能效等级（Eas）：700 mJ外壳连接：ISOLATED
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：400 V
最大漏极电流 (Abs) (ID)：14 A最大漏极电流 (ID)：14 A
最大漏源导通电阻：0.415 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：TO-254AAJESD-30 代码：S-MSFM-P3
JESD-609代码：e0元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：METAL
封装形状：SQUARE封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：150 W最大脉冲漏极电流 (IDM)：56 A
认证状态：Qualified参考标准：MIL-19500/592
子类别：FET General Purpose Power表面贴装：NO
端子面层：Tin/Lead (Sn/Pb)端子形式：PIN/PEG
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

JANTX2N7227 数据手册

 浏览型号JANTX2N7227的Datasheet PDF文件第2页浏览型号JANTX2N7227的Datasheet PDF文件第3页浏览型号JANTX2N7227的Datasheet PDF文件第4页浏览型号JANTX2N7227的Datasheet PDF文件第5页浏览型号JANTX2N7227的Datasheet PDF文件第6页浏览型号JANTX2N7227的Datasheet PDF文件第7页 
PD - 90491D  
IRFM350  
JANTX2N7227  
JANTXV2N7227  
POWER MOSFET  
THRU-HOLE (TO-254AA)  
REF:MIL-PRF-19500/592  
400V, N-CHANNEL  
HEXFET® MOSFETTECHNOLOGY  
Product Summary  
Part Number  
RDS(on)  
ID  
IRFM350  
0.315 Ω  
14A  
HEXFET® MOSFET technology is the key to International  
Rectifier’s advanced line of power MOSFET transistors. The  
efficient geometry design achieves very low on-state re-  
sistance combined with high transconductance. HEXFET  
transistors also feature all of the well-established advan-  
tages of MOSFETs, such as voltage control, very fast switch-  
ing, ease of paralleling and electrical parameter temperature  
stability. They are well-suited for applications such as switch-  
ing power supplies, motor controls, inverters, choppers,  
audio amplifiers, high energy pulse circuits, and virtually  
any application where high reliability is required. The  
HEXFET transistor’s totally isolated package eliminates the  
need for additional isolating material between the device  
and the heatsink. This improves thermal efficiency and  
reduces drain capacitance.  
TO-254AA  
Features:  
n
n
n
n
n
n
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Electrically Isolated  
Dynamic dv/dt Rating  
Light-weight  
Absolute Maximum Ratings  
Parameter  
Units  
I
@ V  
@ V  
= 10V, T = 25°C  
Continuous Drain Current  
14  
9.0  
D
GS  
C
A
I
= 10V, T = 100°C Continuous Drain Current  
D
GS  
C
I
Pulsed Drain Current ➀  
Max. Power Dissipation  
56  
DM  
@ T = 25°C  
P
150  
1.2  
W
W/°C  
V
D
C
Linear Derating Factor  
V
Gate-to-Source Voltage  
±20  
700  
14  
GS  
E
Single Pulse Avalanche Energy ➀  
Avalanche Current ➀  
mJ  
A
AS  
I
AR  
E
Repetitive Avalanche Energy ➀  
Peak Diode Recovery dv/dt ➀  
Operating Junction  
15  
mJ  
V/ns  
AR  
dv/dt  
4.0  
T
-55 to 150  
J
T
Storage Temperature Range  
oC  
g
STG  
300 ( 0.063 in.(1.6mm) from case for 10s)  
9.3 (Typical)  
Lead Temperature  
Weight  
For footnotes refer to the last page  
www.irf.com  
1
1/29/02  
1234567

中文翻译

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JANTX2N7227 替代型号

型号 品牌 替代类型 描述 数据表
JANTXV2N7227 INFINEON

完全替代

 POWER MOSFET THRU-HOLE (TO-254AA)
IRFM350 INFINEON

完全替代

 POWER MOSFET THRU-HOLE (TO-254AA)
2N7227 MICROSEMI

功能相似

 N-CHANNEL MOSFET

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 		1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR Qualified per MIL-PRF-19500/507
JANTX2N7227U MICROSEMI

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 		Power Field-Effect Transistor, 14A I(D), 400V, 0.415ohm, 1-Element, N-Channel, Silicon, Me
JANTX2N7227U INFINEON

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 		400V Single N-Channel Hi-Rel MOSFET in a SMD-1 package - A JANTX2N7227U with Hermetic Pack

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