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IRFM360B PDF预览

IRFM360B

更新时间: 2024-11-21 14:56:15
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
7页 248K
描述
400V Single N-Channel Hi-Rel MOSFET in a TO-254AA package -

IRFM360B 技术参数

生命周期:Active包装说明:FLANGE MOUNT, S-MSFM-P3
Reach Compliance Code:compliant风险等级:5.65
Is Samacsys:N其他特性:HIGH RELIABILITY
雪崩能效等级(Eas):980 mJ外壳连接:ISOLATED
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:400 V
最大漏极电流 (ID):23 A最大漏源导通电阻:0.23 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-254AA
JESD-30 代码:S-MSFM-P3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:METAL封装形状:SQUARE
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):92 A表面贴装:NO
端子形式:PIN/PEG端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRFM360B 数据手册

 浏览型号IRFM360B的Datasheet PDF文件第2页浏览型号IRFM360B的Datasheet PDF文件第3页浏览型号IRFM360B的Datasheet PDF文件第4页浏览型号IRFM360B的Datasheet PDF文件第5页浏览型号IRFM360B的Datasheet PDF文件第6页浏览型号IRFM360B的Datasheet PDF文件第7页 
PD-90712C  
IRFM360  
400V, N-CHANNEL  
POWER MOSFET  
THRU-HOLE (TO-254AA)  
HEXFET® MOSFET TECHNOLOGY  
Product Summary  
Part Number  
RDS(on)  
ID  
IRFM360  
0.20 Ω  
23A  
HEXFET® MOSFET technology is the key to International  
Rectifier’s advanced line of power MOSFET transistors.  
The efficient geometry design achieves very low on-state  
resistance combined with high transconductance. HEXFET  
transistors also feature all of the well-established advantages  
of MOSFETs, such as voltage control, very fast switching,  
ease of paralleling and electrical parameter temperature  
stability. They are well-suited for applications such as  
switching power supplies, motor controls, inverters,  
choppers, audio amplifiers, high energy pulse circuits, and  
virtually any application where high reliability is required.  
The HEXFET transistor’s totally isolated package eliminates  
the need for additional isolating material between the device  
and the heatsink. This improves thermal efficiency and  
reduces drain capacitance.  
TO-254AA  
Features:  
n
n
n
n
n
n
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Electrically Isolated  
Dynamic dv/dt Rating  
Light-weight  
Absolute Maximum Ratings  
Parameter  
Units  
I
@ V  
@ V  
= 10V, T = 25°C  
Continuous Drain Current  
23  
14  
D
GS  
GS  
C
A
I
D
= 10V, T = 100°C Continuous Drain Current  
C
I
Pulsed Drain Current À  
Max. Power Dissipation  
92  
DM  
@ T = 25°C  
P
250  
2.0  
W
W/°C  
V
D
C
Linear Derating Factor  
V
Gate-to-Source Voltage  
Single Pulse Avalanche Energy Á  
Avalanche Current À  
±20  
980  
23  
GS  
E
mJ  
A
AS  
I
AR  
E
Repetitive Avalanche Energy À  
Peak Diode Recovery dv/dt   
Operating Junction  
25  
mJ  
V/ns  
AR  
dv/dt  
4.0  
T
-55 to 150  
J
T
Storage Temperature Range  
°C  
g
STG  
300 ( 0.063 in.(1.6mm) from case for 10s)  
9.3 (Typical)  
Lead Temperature  
Weight  
For footnotes refer to the last page  
www.irf.com  
1
05/12/15  

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