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IRFL1006TRPBF PDF预览

IRFL1006TRPBF

更新时间: 2024-11-16 13:08:47
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体小信号场效应晶体管开关光电二极管局域网
页数 文件大小 规格书
9页 129K
描述
Small Signal Field-Effect Transistor, 1.6A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE, TO-261AA, 4 PIN

IRFL1006TRPBF 数据手册

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PD - 91876  
IRFL1006  
HEXFET® Power MOSFET  
l Surface Mount  
D
l Advanced Process Technology  
l Dynamic dv/dt Rating  
l Fast Switching  
VDSS = 60V  
RDS(on) = 0.22Ω  
l Fully Avalanche Rated  
G
ID = 1.6A  
S
Description  
Fifth Generation HEXFETs from International Rectifier  
utilize advanced processing techniques to achieve  
extremelylow on-resistancepersiliconarea. Thisbenefit,  
combined with the fast switching speed and ruggedized  
device design that HEXFET Power MOSFETs are well  
knownfor,providesthedesignerwithanextremelyefficient  
andreliabledeviceforuseinawidevarietyofapplications.  
The SOT-223 package is designed for surface-mount  
usingvaporphase,infrared,orwavesolderingtechniques.  
Its unique package design allows for easy automatic pick-  
and-place as with other SOT or SOIC packages but has  
the added advantage of improved thermal performance  
due to an enlarged tab for heatsinking. Power dissipation  
of 1.0W is possible in a typical surface mount application.  
S O T -223  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
ID @ TA = 25°C  
ID @ TA = 25°C  
ID @ TA = 70°C  
IDM  
Continuous Drain Current, VGS @ 10V**  
Continuous Drain Current, VGS @ 10V*  
Continuous Drain Current, VGS @ 10V*  
Pulsed Drain Current   
2.3  
1.6  
A
1.3  
6.4  
PD @TA = 25°C  
PD @TA = 25°C  
Power Dissipation (PCB Mount)**  
Power Dissipation (PCB Mount)*  
Linear Derating Factor (PCB Mount)*  
Gate-to-Source Voltage  
2.1  
W
W
1.0  
8.3  
mW/°C  
V
VGS  
± 20  
54  
EAS  
Single Pulse Avalanche Energy‚  
Avalanche Current  
mJ  
A
IAR  
1.6  
EAR  
Repetitive Avalanche Energy*  
Peak Diode Recovery dv/dt ƒ  
Junction and Storage Temperature Range  
0.1  
mJ  
V/ns  
°C  
dv/dt  
TJ, TSTG  
5.0  
-55 to + 150  
Thermal Resistance  
Parameter  
Junction-to-Amb. (PCB Mount, steady state)*  
Junction-to-Amb. (PCB Mount, steady state)**  
Typ.  
90  
Max.  
120  
60  
Units  
RθJA  
RθJA  
°C/W  
50  
* When mounted on FR-4 board using minimum recommended footprint.  
** When mounted on 1 inch square copper board, for comparison with other SMD devices.  
www.irf.com  
1
3/29/99  

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