Datasheet > IRFB7740PBF

IRFB7740PBF

更新时间： 2024-11-20 21:15:07

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	530K
描述
Power Field-Effect Transistor

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中文翻译

获取价格

数据手册

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IRFB7740PBF 数据手册

StrongIRFET™

IRFB7740PbF

HEXFET^®Power MOSFET

Application

 Brushed Motor drive applications

 BLDC Motor drive applications

Battery powered circuits

 Half-bridge and full-bridge topologies

 Synchronous rectifier applications

 Resonant mode power supplies

 OR-ing and redundant power switches

 DC/DC and AC/DC converters

 DC/AC Inverters

V_DSS

75V

R_DS(on)typ.

6.0m

7.3m

87A

max

I_D

Benefits

 Improved Gate, Avalanche and Dynamic dV/dt Ruggedness

 Fully Characterized Capacitance and Avalanche SOA

 Enhanced body diode dV/dt and dI/dt Capability

 Lead-Free, RoHS Compliant

TO-220AB

IRFB7740PbF

Gate

Drain

Source

Standard Pack

Form

Base part number

Package Type

Orderable Part Number

Quantity

IRFB7740PbF

TO-220

Tube

IRFB7740PbF

100

= 52A

T = 125°C

T = 25°C

100

125

150

175

, Gate-to-Source Voltage (V)

, CaseTemperature (°C)

Fig 2. Maximum Drain Current vs. Case Temperature

Fig 1. Typical On-Resistance vs. Gate Voltage

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March 5, 2015

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