Datasheet > 晶体管 > 功率场效应晶体管> IRFB9N60APBF

IRFB9N60APBF

更新时间： 2024-11-20 03:15:11

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲局域网
页数	文件大小	规格书
9页	157K
描述
HEXFET Power MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRFB9N60APBF 数据手册

PD - 94821

SMPS MOSFET

IRFB9N60APbF

HEXFET^®Power MOSFET

Applications

V_DSS

600V

Rds(on) max

I_D

9.2A

ꢀ Switch Mode Power Supply ( SMPS )

ꢀ Uninterruptable Power Supply

ꢀ High speed power switching

ꢀ Lead-Free

0.75Ω

Benefits

ꢀ Low Gate Charge Qg results in Simple

Drive Requirement

ꢀ Improved Gate, Avalanche and dynamic

dv/dt Ruggedness

ꢀ Fully Characterized Capacitance and

Avalanche Voltage and Current

G D S

TO-220AB

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

_D@ T_C= 100°C

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current ꢁ

9.2

5.8

I_DM

P_D@T_C= 25°C

Power Dissipation

170

W/°C

Linear Derating Factor

1.3

V_GS

dv/dt

T_J

Gate-to-Source Voltage

± 30

Peak Diode Recovery dv/dt ꢃ

Operating Junction and

5.0

V/ns

-55 to + 150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torqe, 6-32 or M3 screw

°C

300 (1.6mm from case )

10 lbf•in (1.1N•m)

Applicable Off Line SMPS Topologies:

ꢀ Active Clamped Forward

ꢀ Main Switch

Notes ꢁ through ꢂ are on page 8

www.irf.com

11/7/03

12 3 4 5 6 7...9

中文翻译

下载PDF

与IRFB9N60APBF相关器件

型号	品牌	获取价格	描述	数据表
IRFB9N65	INFINEON	获取价格	Power MOSFET(Vdss=650V, Rds(on)max=0.93ohm, Id=8.5A)
IRFB9N65A	INFINEON	获取价格	Power MOSFET(Vdss=650V, Rds(on)max=0.93ohm, Id=8.5A)
IRFB9N65A	VISHAY	获取价格	Power MOSFET
IRFB9N65APBF	VISHAY	获取价格	Power MOSFET
IRFB9N65APBF	INFINEON	获取价格	SMPS MOSFET
IRFBA1404	INFINEON	获取价格	Power MOSFET(Vdss=40V, Rds(on)=3.7mohm, Id=206A)
IRFBA1404P	INFINEON	获取价格	Power MOSFET(Vdss=40V, Rds(on)=3.7mohm, Id=206A)
IRFBA1404PPBF	INFINEON	获取价格	AUTOMOTIVE MOSFET HEXFET㈢ Power MOSFET
IRFBA1405	INFINEON	获取价格	Power MOSFET(Vdss=55V, Rds(on)=5.0mohm, Id=17
IRFBA1405P	INFINEON	获取价格	Power MOSFET(Vdss=55V, Rds(on)=5.0mohm, Id=17