IRFB9N65

更新时间： 2024-11-19 22:26:11

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	104K
描述
Power MOSFET(Vdss=650V, Rds(on)max=0.93ohm, Id=8.5A)

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中文翻译

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数据手册

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IRFB9N65 数据手册

PD - 91815C

SMPS MOSFET

IRFB9N65A

HEXFET^®Power MOSFET

Applications

V_DSS

650V

R_DS(on)max

I_D

8.5A

l Switch Mode Power Supply (SMPS)

l Uninterruptible Power Supply

l High Speed Power Switching

0.93Ω

Benefits

l Low Gate Charge Qg results in Simple

Drive Requirement

l Improved Gate, Avalanche and Dynamic

dv/dt Ruggedness

l Fully Characterized Capacitance and

Avalanche Voltage and Current

TO-220AB

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

_D@ T_C= 100°C

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

8.5

5.4

I_DM

P_D@T_C= 25°C

Power Dissipation

167

W/°C

Linear Derating Factor

1.3

V_GS

dv/dt

T_J

Gate-to-Source Voltage

± 30

Peak Diode Recovery dv/dt

Operating Junction and

2.8

V/ns

-55 to + 150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torqe, 6-32 or M3 screw

°C

300 (1.6mm from case )

10 lbf•in (1.1N•m)

Typical SMPS Topologies

l Single Transistor Flyback

l Single Transistor Forward

Notes through ꢀ are on page 8

www.irf.com

6/21/00

12 3 4 5 6 7 8

中文翻译

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