IRFBA1405P

更新时间： 2024-11-19 22:51:35

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管
页数	文件大小	规格书
9页	238K
描述
Power MOSFET(Vdss=55V, Rds(on)=5.0mohm, Id=174A)

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

IRFBA1405P 数据手册

PD -94111

AUTOMOTIVE MOSFET

IRFBA1405P

HEXFET^®Power MOSFET

Typical Applications

●

Electric Power Steering (EPS)

Anti-lock Braking System (ABS)

Wiper Control

Climate Control

Power Door

V_DSS= 55V

Benefits

●

Advanced Process Technology

R_DS(on)= 5.0mΩ

Ultra Low On-Resistance

Dynamic dv/dt Rating

I_D= 174A

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Description

Specifically designed for Automotive applications, this Stripe Planar

design of HEXFET^®Power MOSFETs utilizes the latest processing

techniques to achieve extremely low on-resistance per silicon area.

Additional features of this MOSFET are a 175^oC junction operating

temperature, fast switching speed and improved ruggedness in

single and repetitive avalanche. The Super-220 ^TMis a package that

has been designed to have the same mechanical outline and pinout

as the industry standard TO-220 but can house a considerably

larger silicon die. The result is significantly increased current

handling capability over both the TO-220 and the much larger TO-

247 package. The combination of extremely low on-resistance

silicon and the Super-220 ^TMpackage makes it ideal to reduce the

component count in multiparalled TO-220 applications, reduce

system power dissipation, upgrade existing designs or have TO-247

performance in a TO-220 outline. This package has been designed

to meet automotive, Q101, qualification standard.

Super-220™

These benefits make this design an extremely efficient and reliable

device for use in Automotive applications and a wide variety of other

applications.

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

174

123

680

P_D@T_C= 25°C

Power Dissipation

330

W/°C

Linear Derating Factor

2.2

V_GS

E_AS

I_AR

Gate-to-Source Voltage

± 20

560

Single Pulse Avalanche Energy

Avalanche Current

See Fig.12a, 12b, 15, 16

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

V/ns

5.0

-40 to + 175

-55 to + 175

300 (1.6mm from case )

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Recommended clip force

°C

www.irf.com

3/1/01

12 3 4 5 6 7...9

中文翻译

下载PDF

IRFBA1405P 替代型号

型号	品牌	替代类型	描述	数据表
IRFBA1405PPBF	INFINEON	功能相似	HEXFET㈢ Power MOSFET

与IRFBA1405P相关器件

型号	品牌	获取价格	描述	数据表
IRFBA1405PPBF	INFINEON	获取价格	HEXFET㈢ Power MOSFET
IRFBA22N50	INFINEON	获取价格	Power MOSFET(Vdss=500V, Rds(on)max=0.23ohm, Id=24A)
IRFBA22N50A	INFINEON	获取价格	Power MOSFET(Vdss=500V, Rds(on)max=0.23ohm, Id=24A)
IRFBA22N50APBF	INFINEON	获取价格	HEXFET㈢Power MOSFET
IRFBA31N50L	INFINEON	获取价格	HEXFET Power MOSFET
IRFBA31N50LPBF	INFINEON	获取价格	Power Field-Effect Transistor, 31A I(D), 500V, 0.152ohm, 1-Element, N-Channel, Silicon, Me
IRFBA32N50K	INFINEON	获取价格	HEXFET㈢ Power MOSFET
IRFBA32N50KPBF	INFINEON	获取价格	暂无描述
IRFBA34N50C	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 500V V(BR)DSS \| 40A I(D) \| TO-273AA
IRFBA34N50CPBF	INFINEON	获取价格	Power Field-Effect Transistor, 40A I(D), 500V, 0.075ohm, 1-Element, N-Channel, Silicon, Me

与IRFBA1405P相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

25
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

17
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

49
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

46

产品中心

服务支持

精选活动

关于我们

帮助中心

IRFBA1405P

IRFBA1405P 数据手册

IRFBA1405P 替代型号

与IRFBA1405P相关器件

与IRFBA1405P相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IRFBA1405P

IRFBA1405P 数据手册

IRFBA1405P 替代型号

与IRFBA1405P相关器件

与IRFBA1405P相关文章

您还可以找

您在本页遇到什么问题？