IRFBC20S

更新时间： 2024-09-15 05:39:27

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	247K
描述
Power MOSFET

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替代型号

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IRFBC20S 数据手册

IRFBC20S, SiHFBC20S, IRFBC20L, SiHFBC20L

Vishay Siliconix

Power MOSFET

FEATURES

PRODUCT SUMMARY

V_DS(V)

• Surface Mount (IRFBC20S/SiHFBC20S)

600

• Low-Profile Through-Hole (IRFBC20L/SiHFBC20L)

Available

• Available in Tape and Reel (IRFBC20S/SiHFBC20S)

• Dynamic dV/dt Rating

• 150 °C Operating Temperature

• Fast Switching

• Fully Avalanche Rated

• Lead (Pb)-free Available

DESCRIPTION

R_DS(on)(Ω)

V_GS= 10 V

4.4

RoHS*

COMPLIANT

Q_g(Max.) (nC)

3.0

_gs(nC)

_gd(nC)

8.9

Configuration

Single

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

D²PAK (TO-263)

I²PAK (TO-262)

The D²PAK is a surface mount power package capable of

the accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible

on-resistance in any existing surface mount package. The

D²PAK is suitable for high current applications because of its

low internal connection resistance and can dissipate up to

N-Channel MOSFET

2.0

W in a typical surface mount application. The

through-hole version (IRFBC20L/SiHFBC20L) is a available

for low-profile applications.

ORDERING INFORMATION

Package

D²PAK (TO-263)

I²PAK (TO-262)

IRFBC20SPbF

SiHFBC20S-E3

IRFBC20S

IRFBC20STRLPbF^a

SiHFBC20STL-E3^a

IRFBC20STRL^a

IRFBC20LPbF

SiHFBC20L-E3

IRFBC20L

Lead (Pb)-free

SnPb

SiHFBC20S

SiHFBC20STL^a

SiHFBC20L

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

600

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

_C= 25 °C

2.2

1.4

8.0

0.40

Continuous Drain Current^e

V_GSat 10 V

I_D

T_C=100°C

Pulsed Drain Current^{a, e}

Linear Derating Factor

Single Pulse Avalanche Energy^{b, e}

Avalanche Current^a

I_DM

W/°C

E_AS

I_AR

2.2

5.0

3.1

Repetiitive Avalanche Energy^a

E_AR

_A= 25 °C

Maximum Power Dissipation

Peak Diode Recovery dV/dt^{c, e}

P_D

V/ns

°C

T_C= 25 °C

dV/dt

3.0

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

T_J, T_stg

- 55 to + 150

300^d

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= 50 V, starting T_J= 25 °C, L = 31 mH, R_G= 25 Ω, I_AS= 2.2 A (see fig. 12).

c. I_SD≤ 2.2 A, dI/dt ≤ 40 A/µs, V_DD≤ V_DS, T_J≤ 150 °C.

d. 1.6 mm from case.

e. Uses IRFBC20/SiHFBC20 data and test conditions.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91107

S-Pending-Rev. A, 03-Jun-08

www.vishay.com

WORK-IN-PROGRESS

12 3 4 5 6 7 8

中文翻译

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IRFBC20S 替代型号

型号	品牌	替代类型	描述	数据表
IRFBC20SPBF	VISHAY	完全替代	Power MOSFET

与IRFBC20S相关器件

型号	品牌	获取价格	描述	数据表
IRFBC20S, SiHFBC20S, IRFBC20L, SiHFBC20L	VISHAY	获取价格	Power MOSFET
IRFBC20S/LPBF	INFINEON	获取价格	HEXFET Power MOSFET
IRFBC20S_V01	VISHAY	获取价格	Power MOSFET
IRFBC20SPBF	INFINEON	获取价格	HEXFET Power MOSFET
IRFBC20SPBF	VISHAY	获取价格	Power MOSFET
IRFBC20STRL	VISHAY	获取价格	Power MOSFET
IRFBC20STRLPBF	VISHAY	获取价格	Power MOSFET
IRFBC20STRLPBFA	VISHAY	获取价格	Power MOSFET
IRFBC20STRR	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 600V V(BR)DSS \| 2.2A I(D) \| TO-263AB
IRFBC20STRRPBF	INFINEON	获取价格	暂无描述

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