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IRFBA1405PPBF

更新时间： 2024-11-20 03:58:11

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	154K
描述
HEXFET㈢ Power MOSFET

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中文翻译

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数据手册
替代型号

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IRFBA1405PPBF 数据手册

PD-95152

AUTOMOTIVE MOSFET

Typical Applications

l Electric Power Steering (EPS)

l Anti-lock Braking System (ABS)

l Wiper Control

IRFBA1405PPbF

HEXFET^®Power MOSFET

l Climate Control

l Power Door

lLead-Free

V_DSS= 55V

Benefits

_DS(on)= 5.0mΩ

l Advanced Process Technology

l Ultra Low On-Resistance

l Dynamic dv/dt Rating

l175°COperatingTemperature

l Fast Switching

I_D= 174A

l Repetitive Avalanche Allowed up to Tjmax

Description

Specifically designed for Automotive applications, this Stripe Planar design

of HEXFET^®Power MOSFETs utilizes the latest processing techniques to

achieve extremely low on-resistance per silicon area. Additional features

of this MOSFET are a 175^oC junction operating temperature, fast

switching speed and improved ruggedness in single and repetitive

avalanche. The Super-220

is a package that has been designed to

have the same mechanical outline and pinout as the industry standard

TO-220 but can house a considerably larger silicon die. The result is

significantly increased current handling capability over both the TO-220

Super-220

and the much larger TO-247 package. The combination of extremely low

on-resistance silicon and the Super-220

package makes it ideal to

reduce the component count in multiparalled TO-220 applications, reduce

system power dissipation, upgrade existing designs or have TO-247

performance in a TO-220 outline. This package has been designed to

meet automotive, Q101, qualification standard.

These benefits make this design an extremely efficient and reliable device

for use in Automotive applications and a wide variety of other applications.

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

174

123

680

P_D@T_C= 25°C

Power Dissipation

330

W/°C

Linear Derating Factor

2.2

V_GS

E_AS

I_AR

Gate-to-Source Voltage

± 20

560

Single Pulse Avalanche Energy

Avalanche Current

See Fig.12a, 12b, 15, 16

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

V/ns

5.0

-40 to + 175

-55 to + 175

300 (1.6mm from case )

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Recommended clip force

°C

www.irf.com

09/14/04

12 3 4 5 6 7...10

中文翻译

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IRFBA1405PPBF 替代型号

型号	品牌	替代类型	描述	数据表
IRFBA1405P	INFINEON	功能相似	Power MOSFET(Vdss=55V, Rds(on)=5.0mohm, Id=17

与IRFBA1405PPBF相关器件

型号	品牌	获取价格	描述	数据表
IRFBA22N50	INFINEON	获取价格	Power MOSFET(Vdss=500V, Rds(on)max=0.23ohm, Id=24A)
IRFBA22N50A	INFINEON	获取价格	Power MOSFET(Vdss=500V, Rds(on)max=0.23ohm, Id=24A)
IRFBA22N50APBF	INFINEON	获取价格	HEXFET㈢Power MOSFET
IRFBA31N50L	INFINEON	获取价格	HEXFET Power MOSFET
IRFBA31N50LPBF	INFINEON	获取价格	Power Field-Effect Transistor, 31A I(D), 500V, 0.152ohm, 1-Element, N-Channel, Silicon, Me
IRFBA32N50K	INFINEON	获取价格	HEXFET㈢ Power MOSFET
IRFBA32N50KPBF	INFINEON	获取价格	暂无描述
IRFBA34N50C	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 500V V(BR)DSS \| 40A I(D) \| TO-273AA
IRFBA34N50CPBF	INFINEON	获取价格	Power Field-Effect Transistor, 40A I(D), 500V, 0.075ohm, 1-Element, N-Channel, Silicon, Me
IRFBA35N60C	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 600V V(BR)DSS \| 35A I(D) \| TO-273AA

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