IRFBA22N50A

更新时间： 2024-10-29 22:51:35

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲局域网
页数	文件大小	规格书
8页	107K
描述
Power MOSFET(Vdss=500V, Rds(on)max=0.23ohm, Id=24A)

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中文翻译

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数据手册

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IRFBA22N50A 数据手册

PD-91866B

IRFBA22N50A

SMPS MOSFET

HEXFET^®Power MOSFET

Applications

V_DSS

500V

R_DS(on)max

I_D

24A

l Switch Mode Power Supply ( SMPS )

l Uninterruptible Power Supply

l High Speed Power Switching

0.23Ω

Benefits

l Low Gate Charge Qg results in Simple

Drive Requirement

l Improved Gate, Avalanche and Dynamic

dv/dt Ruggedness

l Fully Characterized Capacitance and

Avalanche Voltage and Current

l Effective Coss Specified (See AN1001)

Super-220™

(TO-273AA)

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

P_D@T_C= 25°C

PowerDissipation

340

W/°C

LinearDeratingFactor

2.7

V_GS

dv/dt

T_J

Gate-to-SourceVoltage

± 30

Peak Diode Recovery dv/dt

OperatingJunctionand

3.4

V/ns

-55 to + 150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Recommended clip force

°C

300 (1.6mm from case )

Applicable Off Line SMPS Topologies:

l Full Bridge Converters

l Power Factor Correction Boost

Notes through ꢀ are on page 8

www.irf.com

12/12/00

12 3 4 5 6 7 8

中文翻译

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