Datasheet > IRFBC20STRLPBFA

IRFBC20STRLPBFA

更新时间： 2024-11-05 02:52:23

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
11页	329K
描述
Power MOSFET

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IRFBC20STRLPBFA 数据手册

IRFBC20S, SiHFBC20S, IRFBC20L, SiHFBC20L

Vishay Siliconix

Power MOSFET

FEATURES

PRODUCT SUMMARY

V_DS(V)

• Halogen-free According to IEC 61249-2-21

Definition

600

• Surface Mount (IRFBC20S, SiHFBC20S)

R_DS(on)()

V_GS= 10 V

4.4

•

Low-Profile Through-Hole (IRFBC20L, SiHFBC20L)

• Available in Tape and Reel (IRFBC20, SiiHFBC20S)

• Dynamic dV/dt Rating

• 150 °C Operating Temperature

• Fast Switching

• Fully Avalanche Rated

Q_g(Max.) (nC)

3.0

_gs(nC)

_gd(nC)

8.9

Configuration

Single

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

D²PAK (TO-263)

I²PAK (TO-262)

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The D²PAK is a surface mount power package capable of

the accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible

on-resistance in any existing surface mount package. The

D²PAK is suitable for high current applications because of

its low internal connection resistance and can dissipate up

to 2.0 W in a typical surface mount application. The

through-hole version (IRFBC20L, SiHFBC20L) is a available

for low-profile applications.

N-Channel MOSFET

ORDERING INFORMATION

Package

D²PAK (TO-263)

SiHFBC20S-GE3

IRFBC20SPbF

SiHFBC20S-E3

D²PAK (TO-263)

I²PAK (TO-262)

SiHFBC20L-GE3

IRFBC20LPbF

SiHFBC20L-E3

Lead (Pb)-free and Halogen-free

SiHFBC20STRL-GE3^a

IRFBC20STRLPbF^a

SiHFBC20STL-E3^a

Lead (Pb)-free

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

V_DS

LIMIT

600

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_GS

_C= 25 °C

2.2

1.4

8.0

0.40

Continuous Drain Current^e

V_GSat 10 V

I_D

T_C= 100 °C

Pulsed Drain Current^{a, e}

Linear Derating Factor

Single Pulse Avalanche Energy^{b, e}

Avalanche Current^a

I_DM

W/°C

E_AS

I_AR

2.2

5.0

3.1

Repetiitive Avalanche Energy^a

E_AR

T_A= 25 °C

Maximum Power Dissipation

Peak Diode Recovery dV/dt^{c, e}

P_D

V/ns

°C

T_C= 25 °C

dV/dt

3.0

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

T_J, T_stg

- 55 to + 150

300^d

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= 50 V, starting T_J= 25 °C, L = 31 mH, R_g= 25 , I_AS= 2.2 A (see fig. 12).

c. I_SD 2.2 A, dI/dt  40 A/μs, V_DD V_DS, T_J 150 °C.

d. 1.6 mm from case.

e. Uses IRFBC20, SiHFBC20 data and test conditions.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91107

S11-1052-Rev. C, 30-May-11

www.vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...11

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