IRFBC30A

更新时间： 2024-11-05 22:31:43

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲局域网
页数	文件大小	规格书
8页	101K
描述
Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A)

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中文翻译

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数据手册

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IRFBC30A 数据手册

PD- 91889A

SMPS MOSFET

V_DSS

IRFBC30A

HEXFET^®Power MOSFET

Applications

Rds(on) max

I_D

l Switch Mode Power Supply (SMPS)

l Uninterruptable Power Supply

l High speed power switching

600V

2.2Ω

3.6A

Benefits

l Low Gate Charge Qg results in Simple

Drive Requirement

l Improved Gate, Avalanche and dynamic

dv/dt Ruggedness

l Fully Characterized Capacitance and

Avalanche Voltage and Current

l Effective Coss specified (See AN 1001)

G D S

TO-220AB

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

3.6

2.3

P_D@T_C= 25°C

Power Dissipation

W/°C

Linear Derating Factor

0.69

V_GS

dv/dt

T_J

Gate-to-Source Voltage

± 30

Peak Diode Recovery dv/dt

Operating Junction and

7.0

V/ns

-55 to + 150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torqe, 6-32 or M3 screw

°C

300 (1.6mm from case )

10 lbf•in (1.1N•m)

Typical SMPS Topology:

l Single transistor Flyback

Notes through ꢀare on page 8

www.irf.com

5/4/00

12 3 4 5 6 7 8

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