Datasheet > IRFBC30ASTRLPBF

IRFBC30ASTRLPBF

更新时间： 2024-11-24 20:15:59

品牌	Logo	应用领域
英飞凌 - INFINEON		开关脉冲晶体管
页数	文件大小	规格书
10页	284K
描述
Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3

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IRFBC30ASTRLPBF 数据手册

PD-95534

SMPS MOSFET

IRFBC30AS/LPbF

HEXFET^®Power MOSFET

Applications

V_DSS

600V

Rds(on) max

I_D

3.6A

l Switch Mode Power Supply (SMPS)

l Uninterruptable Power Supply

l High speed power switching

l Lead-Free

2.2Ω

Benefits

l Low Gate Charge Qg results in Simple

Drive Requirement

l Improved Gate, Avalanche and dynamic

dv/dt Ruggedness

l Fully Characterized Capacitance and

Avalanche Voltage and Current

l Effective Coss specified (See AN 1001)

TO-262

D Pak

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

3.6

2.3

P_D@T_C= 25°C

Power Dissipation

W/°C

Linear Derating Factor

0.69

V_GS

dv/dt

T_J

Gate-to-Source Voltage

± 30

Peak Diode Recovery dv/dt

Operating Junction and

7.0

V/ns

-55 to + 150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

300 (1.6mm from case )

Typical SMPS Topology:

l Single transistor Flyback

Notes through ꢀare on page 10

www.irf.com

7/20/04

12 3 4 5 6 7...10

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