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IRFBC40 PDF预览

IRFBC40

更新时间: 2024-11-23 22:31:43
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
8页 99K
描述
Power MOSFET(Vdss=600V, Rds(on)max=1.2ohm, Id=6.2A)

IRFBC40 数据手册

 浏览型号IRFBC40的Datasheet PDF文件第2页浏览型号IRFBC40的Datasheet PDF文件第3页浏览型号IRFBC40的Datasheet PDF文件第4页浏览型号IRFBC40的Datasheet PDF文件第5页浏览型号IRFBC40的Datasheet PDF文件第6页浏览型号IRFBC40的Datasheet PDF文件第7页 
PD-91885A  
SMPS MOSFET  
VDSS  
IRFBC40A  
HEXFET® Power MOSFET  
Applications  
Rds(on) max  
ID  
l Switch Mode Power Supply ( SMPS )  
l Uninterruptable Power Supply  
l High speed power switching  
600V  
1.2Ω  
6.2A  
Benefits  
l Low Gate Charge Qg results in Simple  
Drive Requirement  
l Improved Gate, Avalanche and Dynamic  
dv/dt Ruggedness  
l Fully Characterized Capacitance and  
Avalanche Voltage and Current  
G D S  
TO-220AB  
l Effective Coss Specified ( See AN 1001)  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current   
6.2  
3.9  
A
25  
PD @TC = 25°C  
Power Dissipation  
125  
W
W/°C  
V
Linear Derating Factor  
1.0  
VGS  
dv/dt  
TJ  
Gate-to-Source Voltage  
± 30  
Peak Diode Recovery dv/dt ƒ  
Operating Junction and  
6.0  
V/ns  
-55 to + 150  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
Mounting torqe, 6-32 or M3 screw  
°C  
300 (1.6mm from case )  
10 lbf•in (1.1N•m)  
Typical SMPS Topologies:  
l Single Transistor Forward  
Notes  through are on page 8  
www.irf.com  
1
6/24/99  

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