IRFBC40AS, SiHFBC40AS
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Vishay Siliconix
Power MOSFET
D
FEATURES
• Low gate charge Qg results in simple drive
requirement
D2PAK (TO-263)
Available
Available
• Improved gate, avalanche and dynamic dV/dt
ruggedness
G
• Fully characterized capacitance and avalanche
voltage and current
D
G
• Effective Coss specified
S
S
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
N-Channel MOSFET
Note
*
This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details
PRODUCT SUMMARY
VDS (V)
600
1.2
RDS(on) ()
VGS = 10 V
Qg max. (nC)
42
APPLICATIONS
Q
gs (nC)
gd (nC)
10
• Switch mode power supply (SMPS)
• Uninterruptible power supply
• High speed power switching
Q
20
Configuration
Single
TYPICAL SMPS TOPOLOGIES
• Single transistor forward
ORDERING INFORMATION
Package
D2PAK (TO-263)
SiHFBC40AS-GE3
IRFBC40ASPbF
D2PAK (TO-263)
SiHFBC40ASTRL-GE3 a
IRFBC40ASTRLPbF a
D2PAK (TO-263)
SiHFBC40ASTRR-GE3 a
IRFBC40ASTRRPbF a
Lead (Pb)-free and halogen-free
Lead (Pb)-free
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
600
UNIT
Drain-source voltage
Gate-source voltage
VDS
V
VGS
30
T
C = 25 °C
6.2
Continuous drain current e
VGS at 10 V
ID
TC = 100 °C
3.9
A
Pulsed drain current a, e
IDM
25
Linear derating factor
1.0
W/°C
mJ
A
Single pulse avalanche energy b
Repetitive avalanche current a
Repetitive avalanche energy a
EAS
IAR
570
6.2
EAR
13
mJ
W
Maximum power dissipation
T
C = 25 °C
for 10 s
PD
125
Peak diode recovery dV/dt c, e
Operating junction and storage temperature range
Soldering recommendations (peak temperature) d
dV/dt
TJ, Tstg
6.0
V/ns
-55 to +150
300
°C
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. Starting TJ = 25 °C, L = 29.6 mH, Rg = 25 , IAS = 6.2 A (see fig. 12)
c. ISD 6.2 A, dI/dt 88 A/μs, VDD VDS, TJ 150 °C
d. 1.6 mm from case
e. Uses IRFBC40A, SiHFBC40A data and test conditions
S21-0943-Rev. E, 20-Sep-2021
Document Number: 91113
1
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000