IRFBC40APBF

更新时间： 2024-10-15 04:23:19

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
8页	189K
描述
HEXFET Power MOSFET

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中文翻译

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数据手册

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IRFBC40APBF 数据手册

PD - 94986

SMPS MOSFET

IRFBC40APbF

HEXFET^®Power MOSFET

Applications

V_DSS

600V

Rds(on) max

I_D

6.2A

l Switch Mode Power Supply ( SMPS )

l Uninterruptable Power Supply

l High speed power switching

l Lead-Free

1.2Ω

Benefits

l Low Gate Charge Qg results in Simple

Drive Requirement

l Improved Gate, Avalanche and Dynamic

dv/dt Ruggedness

l Fully Characterized Capacitance and

Avalanche Voltage and Current

G D S

TO-220AB

l Effective Coss Specified ( See AN 1001)

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

6.2

3.9

P_D@T_C= 25°C

Power Dissipation

125

W/°C

Linear Derating Factor

1.0

V_GS

dv/dt

T_J

Gate-to-Source Voltage

± 30

Peak Diode Recovery dv/dt

Operating Junction and

6.0

V/ns

-55 to + 150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torqe, 6-32 or M3 screw

°C

300 (1.6mm from case )

10 lbf•in (1.1N•m)

Typical SMPS Topologies:

l Single Transistor Forward

Notes through ꢀare on page 8

www.irf.com

2/5/04

12 3 4 5 6 7 8

中文翻译

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