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IRFBC40LCPBF PDF预览

IRFBC40LCPBF

更新时间： 2024-10-15 05:39:27
品牌 Logo 应用领域
威世 - VISHAY 晶体晶体管开关脉冲局域网
页数 文件大小 规格书
8页 148K
描述
Power MOSFET

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中文翻译

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IRFBC40LCPBF 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：TO-220AB
包装说明：LEAD FREE PACKAGE-3针数：3
Reach Compliance Code：compliantFactory Lead Time：6 weeks
风险等级：0.54其他特性：AVALANCHE RATED
雪崩能效等级（Eas）：530 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：600 V
最大漏极电流 (Abs) (ID)：6.2 A最大漏极电流 (ID)：6.2 A
最大漏源导通电阻：1.2 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：TO-220ABJESD-30 代码：R-PSFM-T3
JESD-609代码：e3元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：260极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：125 W最大脉冲漏极电流 (IDM)：25 A
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：NO端子面层：Matte Tin (Sn)
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：40晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

IRFBC40LCPBF 数据手册

 浏览型号IRFBC40LCPBF的Datasheet PDF文件第2页浏览型号IRFBC40LCPBF的Datasheet PDF文件第3页浏览型号IRFBC40LCPBF的Datasheet PDF文件第4页浏览型号IRFBC40LCPBF的Datasheet PDF文件第5页浏览型号IRFBC40LCPBF的Datasheet PDF文件第6页浏览型号IRFBC40LCPBF的Datasheet PDF文件第7页 
IRFBC40LC, SiHFBC40LC  
Vishay Siliconix  
Power MOSFET  
FEATURES  
PRODUCT SUMMARY  
VDS (V)  
• Ultra Low Gate Charge  
600 V  
Available  
• Reduced Gate Drive Requirement  
• Enhanced 30 V, VGS Rating  
• Reduced Ciss, Coss, Crss  
R
DS(on) (Ω)  
VGS = 10 V  
1.2  
RoHS*  
Qg (Max.) (nC)  
39  
10  
COMPLIANT  
Q
Q
gs (nC)  
gd (nC)  
• Extremely High Frequency Operation  
• Repetitive Avalanche Rated  
• Lead (Pb)-free Available  
19  
Configuration  
Single  
D
DESCRIPTION  
TO-220  
This new series of low charge Power MOSFETs achieve  
significantly lower gate charge over conventional Power  
MOSFETs. Utilizing the new LCDMOS technology, the  
device improvements are achieved without added product  
cost, allowing for reduced gate drive requirements and total  
system savings. In addition reduced switching losses and  
improved efficiency are achievable in a variety of high  
frequency applications. Frequencies of a few MHz at high  
current are possible using the new low charge Power  
MOSFETs.  
G
S
D
G
S
N-Channel MOSFET  
These device improvements combined with the proven  
ruggedness and reliability that are characteristic of Power  
MOSFETs offer the designer a new standard in power  
transistors for switching applications.  
ORDERING INFORMATION  
Package  
TO-220  
IRFBC40LCPbF  
SiHFBC40LC-E3  
IRFBC40LC  
Lead (Pb)-free  
SnPb  
SiHFBC40LC  
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted  
PARAMETER  
SYMBOL  
LIMIT  
UNIT  
Gate-Source Voltage  
VGS  
30  
6.2  
V
T
C = 25 °C  
Continuous Drain Current  
VGS at 10 V  
ID  
A
TC =100°C  
3.9  
Pulsed Drain Currenta  
IDM  
25  
Linear Derating Factor  
1.0  
W/°C  
mJ  
A
Single Pulse Avalanche Energyb  
Repetitive Avalanche Currenta  
Repetitive Avalanche Energya  
EAS  
IAR  
530  
6.2  
EAR  
13  
mJ  
W
Maximum Power Dissipation  
T
C = 25 °C  
PD  
125  
Peak Diode Recovery dV/dtc  
dV/dt  
TJ, Tstg  
3.0  
V/ns  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)  
- 55 to + 150  
300d  
10  
°C  
for 10 s  
6-32 or M3 screw  
lbf · in  
N · m  
Mounting Torque  
1.1  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).  
b. VDD = 50 V, starting TJ = 25 °C, L = 25 mH, RG = 25 Ω, IAS = 6.2 A (see fig. 12).  
c. ISD ≤ 6.2 A, dI/dt ≤ 80 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.  
d. 1.6 mm from case.  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 91114  
S-81567-Rev. A, 28-Jul-08  
www.vishay.com  
1
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