IRFBC40S, SiHFBC40S, IRFBC40L, SiHFBC40L
www.vishay.com
Vishay Siliconix
Power MOSFET
FEATURES
• Surface-mount (IRFBC40S, SiHFBC40S)
D
D2PAK (TO-263)
I2PAK (TO-262)
•
•
Low-profile through-hole (IRFBC40L, SiHFBC40L)
Available in tape and reel (IRFBC40S, SiHFBC40S)
Available
Available
• Dynamic dV/dt rating
• 150 °C operating temperature
• Fast switching
G
G
D
S
D
S
G
• Fully avalanche rated
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Note
S
N-Channel MOSFET
*
This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details
PRODUCT SUMMARY
VDS (V)
600
1.2
60
RDS(on) ()
VGS = 10 V
DESCRIPTION
Qg max. (nC)
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
Q
gs (nC)
gd (nC)
8.3
30
Q
The D2PAK is a surface-mount power package capable of
the accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible
on-resistance in any existing surface-mount package. The
D2PAK is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2.0 W in a typical surface-mount application. The
through-hole version (IRFBC40L, SiHFBC40L) is available
for low-profile applications.
Configuration
Single
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free SiHFBC40S-GE3
Lead (Pb)-free IRFBC40SPbF
Note
D2PAK (TO-263)
D2PAK (TO-263)
SiHFBC40STRL-GE3 a
IRFBC40STRLPbF a
I2PAK (TO-262)
SiHFBC40L-GE3
IRFBC40LPbF
a. See device orientation
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
Drain-source voltage e
Gate-source voltage e
SYMBOL
LIMIT
600
20
UNIT
VDS
VGS
V
TC = 25 °C
C = 100 °C
6.2
3.9
25
Continuous drain current
VGS at 10 V
ID
T
A
Pulsed drain current a, e
IDM
Linear derating factor
1.0
570
6.2
W/°C
mJ
A
Single pulse avalanche energy b, e
Repetitive avalanche current a
Repetitive avalanche energy a
EAS
IAR
EAR
13
mJ
TC = 25 °C
TA = 25 °C
130
3.1
3.0
-55 to +150
300
Maximum power dissipation
PD
W
V/ns
°C
Peak diode recovery dV/dt c, e
Operating junction and storage temperature range
Soldering recommendations (peak temperature) d
dV/dt
TJ, Tstg
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. VDD = 50 V; starting TJ = 25 °C, L = 27 mH, Rg = 25 , IAS = 6.2 A (see fig. 12)
c. ISD 6.2 A, dI/dt 80 A/μs, VDD VDS, TJ 150 °C
d. 1.6 mm from case
e. Uses IRFBC40, SiHFBC40 data and test conditions
S21-0943-Rev. D, 20-Sep-2021
Document Number: 91116
1
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000