IRFBC40STRL

更新时间： 2024-11-24 05:39:31

品牌	Logo	应用领域
威世 - VISHAY		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
8页	984K
描述
Power MOSFET

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中文翻译

获取价格

数据手册

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IRFBC40STRL 数据手册

IRFBC40S, IRFBC40L, SiHFBC40S, SiHFBC40L

Vishay Siliconix

Power MOSFET

FEATURES

• Surface Mount (IRFBC40S/SiHFBC40S)

PRODUCT SUMMARY

V_DS(V)

600

Available

•

Low-Profile Through-Hole (IRFBC40L, SiHFBC40L)

R_DS(on)(Ω)

V_GS= 10 V

1.2

RoHS*

• Available in Tape and Reel (IRFBC20S,

SiHFBC20S)

COMPLIANT

Q_g(Max.) (nC)

8.3

_gs(nC)

_gd(nC)

• Dynamic dV/dt Rating

• 150 °C Operating Temperature

• Fast Switching

Configuration

Single

• Fully Avalanche Rated

• Lead (Pb)-free Available

D²PAK (TO-263)

I²PAK (TO-262)

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The D²PAK is a surface mount power package capable of

the accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible

on-resistance in any existing surface mount package. The

D²PAK is suitable for high current applications because of its

low internal connection resistance and can dissipate up to

N-Channel MOSFET

2.0

W in a typical surface mount application. The

through-hole version (IRFBC40L/SiHFBC40L) is available

for low-profile applications.

ORDERING INFORMATION

Package

D²PAK (TO-263)

IRFBC40SPbF

SiHFBC40S-E3

IRFBC40S

D²PAK (TO-263)

IRFBC40STRLPbF^a

SiHFBC40STL-E3^a

IRFBC40STRL^a

I²PAK (TO-262)

IRFBC40LPbF

SiHFBC40L-E3

IRFBC40L

Lead (Pb)-free

SnPb

SiHFBC40S

SiHFBC40STL^a

SiHFBC40L

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

600

UNIT

Drain-Source Voltage^e

Gate-Source Voltage^e

V_DS

V_GS

T_C= 25 °C

6.2

3.9

Continuous Drain Current

V_GSat 10 V

I_D

T_C= 100 °C

Pulsed Drain Current^a,e

I_DM

Linear Derating Factor

1.0

570

6.2

W/°C

Single Pulse Avalanche Energy^{b, e}

Repetitive Avalanche Current^a

Repetitive Avalanche Energy^a

E_AS

I_AR

E_AR

_C= 25 °C

130

3.1

3.0

Maximum Power Dissipation

Peak Diode Recovery dV/dt^{c, e}

P_D

T_A= 25 °C

dV/dt

V/ns

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91116

S-Pending-Rev. A, 23-Jun-08

www.vishay.com

WORK-IN-PROGRESS

12 3 4 5 6 7 8

中文翻译

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与IRFBC40STRL相关器件

型号	品牌	获取价格	描述	数据表
IRFBC40STRLPBF	VISHAY	获取价格	Power MOSFET
IRFBC40STRR	VISHAY	获取价格	Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Met
IRFBC40STRRPBF	VISHAY	获取价格	Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Met
IRFBC42	HARRIS	获取价格	6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm, N-Channel Power MOSFETs
IRFBC42-010	INFINEON	获取价格	Power Field-Effect Transistor, 5.5A I(D), 600V, 1.6ohm, 1-Element, N-Channel, Silicon, Met
IRFBC42R	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 600V V(BR)DSS \| 5.4A I(D) \| TO-220AB
IRFBE20	INFINEON	获取价格	Power MOSFET(Vdss=800V, Rds(on)=6.5ohm, Id=1.8A)
IRFBE20	VISHAY	获取价格	Power MOSFET
IRFBE20PBF	VISHAY	获取价格	Power MOSFET
IRFBE20PBF	INFINEON	获取价格	HEXFET Power MOSFET

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