IRFBC40S

更新时间： 2024-11-27 05:39:27

品牌	Logo	应用领域
威世 - VISHAY		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
8页	984K
描述
Power MOSFET

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中文翻译

获取价格

技术参数
数据手册
替代型号

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IRFBC40S 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	SMALL OUTLINE, R-PSSO-G2	针数：	3
Reach Compliance Code：	unknown	HTS代码：	8541.29.00.95
风险等级：	5.01	其他特性：	AVALANCHE RATED
雪崩能效等级（Eas）：	570 mJ	外壳连接：	DRAIN
配置：	SINGLE WITH BUILT-IN DIODE	最小漏源击穿电压：	600 V
最大漏极电流 (Abs) (ID)：	6.2 A	最大漏极电流 (ID)：	6.2 A
最大漏源导通电阻：	1.2 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	R-PSSO-G2	JESD-609代码：	e0
元件数量：	1	端子数量：	2
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	3.1 W
最大脉冲漏极电流 (IDM)：	25 A	认证状态：	Not Qualified
子类别：	FET General Purpose Power	表面贴装：	YES
端子面层：	TIN LEAD	端子形式：	GULL WING
端子位置：	SINGLE	处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

IRFBC40S 数据手册

IRFBC40S, IRFBC40L, SiHFBC40S, SiHFBC40L

Vishay Siliconix

Power MOSFET

FEATURES

• Surface Mount (IRFBC40S/SiHFBC40S)

PRODUCT SUMMARY

V_DS(V)

600

Available

•

Low-Profile Through-Hole (IRFBC40L, SiHFBC40L)

R_DS(on)(Ω)

V_GS= 10 V

1.2

RoHS*

• Available in Tape and Reel (IRFBC20S,

SiHFBC20S)

COMPLIANT

Q_g(Max.) (nC)

8.3

_gs(nC)

_gd(nC)

• Dynamic dV/dt Rating

• 150 °C Operating Temperature

• Fast Switching

Configuration

Single

• Fully Avalanche Rated

• Lead (Pb)-free Available

D²PAK (TO-263)

I²PAK (TO-262)

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The D²PAK is a surface mount power package capable of

the accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible

on-resistance in any existing surface mount package. The

D²PAK is suitable for high current applications because of its

low internal connection resistance and can dissipate up to

N-Channel MOSFET

2.0

W in a typical surface mount application. The

through-hole version (IRFBC40L/SiHFBC40L) is available

for low-profile applications.

ORDERING INFORMATION

Package

D²PAK (TO-263)

IRFBC40SPbF

SiHFBC40S-E3

IRFBC40S

D²PAK (TO-263)

IRFBC40STRLPbF^a

SiHFBC40STL-E3^a

IRFBC40STRL^a

I²PAK (TO-262)

IRFBC40LPbF

SiHFBC40L-E3

IRFBC40L

Lead (Pb)-free

SnPb

SiHFBC40S

SiHFBC40STL^a

SiHFBC40L

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

600

UNIT

Drain-Source Voltage^e

Gate-Source Voltage^e

V_DS

V_GS

T_C= 25 °C

6.2

3.9

Continuous Drain Current

V_GSat 10 V

I_D

T_C= 100 °C

Pulsed Drain Current^a,e

I_DM

Linear Derating Factor

1.0

570

6.2

W/°C

Single Pulse Avalanche Energy^{b, e}

Repetitive Avalanche Current^a

Repetitive Avalanche Energy^a

E_AS

I_AR

E_AR

_C= 25 °C

130

3.1

3.0

Maximum Power Dissipation

Peak Diode Recovery dV/dt^{c, e}

P_D

T_A= 25 °C

dV/dt

V/ns

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91116

S-Pending-Rev. A, 23-Jun-08

www.vishay.com

WORK-IN-PROGRESS

12 3 4 5 6 7 8

中文翻译

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IRFBC40S 替代型号

型号	品牌	替代类型	描述	数据表
IRFBC40SPBF	VISHAY	完全替代	Power MOSFET
IRFBC20SPBF	VISHAY	类似代替	Power MOSFET
2SK3513-01S	FUJI	功能相似	N-CHANNEL SILICON POWER MOSFET

与IRFBC40S相关器件

型号	品牌	获取价格	描述	数据表
IRFBC40S, SiHFBC40S, IRFBC40L, SiHFBC40L	VISHAY	获取价格	Power MOSFET
IRFBC40SPBF	VISHAY	获取价格	Power MOSFET
IRFBC40SPBF	INFINEON	获取价格	HEXFET㈢ Power MOSFET
IRFBC40STRL	VISHAY	获取价格	Power MOSFET
IRFBC40STRLPBF	VISHAY	获取价格	Power MOSFET
IRFBC40STRR	VISHAY	获取价格	Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Met
IRFBC40STRRPBF	VISHAY	获取价格	Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Met
IRFBC42	HARRIS	获取价格	6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm, N-Channel Power MOSFETs
IRFBC42-010	INFINEON	获取价格	Power Field-Effect Transistor, 5.5A I(D), 600V, 1.6ohm, 1-Element, N-Channel, Silicon, Met
IRFBC42R	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 600V V(BR)DSS \| 5.4A I(D) \| TO-220AB