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IRFBC30STRLPBF PDF预览

IRFBC30STRLPBF

更新时间： 2024-10-15 05:39:27
品牌 Logo 应用领域
威世 - VISHAY 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
8页 962K
描述
Power MOSFET

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中文翻译

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IRFBC30STRLPBF 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active包装说明：SMALL OUTLINE, R-PSSO-G2
针数：3Reach Compliance Code：compliant
HTS代码：8541.29.00.95Factory Lead Time：9 weeks
风险等级：5.02其他特性：AVALANCHE RATED
雪崩能效等级（Eas）：290 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：600 V
最大漏极电流 (Abs) (ID)：3.6 A最大漏极电流 (ID)：3.6 A
最大漏源导通电阻：2.2 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-PSSO-G2JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：2工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：74 W最大脉冲漏极电流 (IDM)：14 A
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子面层：Matte Tin (Sn)
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：30晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

IRFBC30STRLPBF 数据手册

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IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30L  
Vishay Siliconix  
Power MOSFET  
FEATURES  
PRODUCT SUMMARY  
VDS (V)  
• Surface Mount (IRFBC30S, SiHFBC30S)  
600  
• Low-Profile Through-Hole (IRFBC30L, SiHFBC30L)  
Available  
• Available in Tape and Reel (IRFBC30S,  
SiHFBC30S)  
• Dynamic dV/dt Rating  
• 150 °C Operating Temperature  
• Fast Switching  
RDS(on) (Ω)  
VGS = 10 V  
2.2  
RoHS*  
COMPLIANT  
Qg (Max.) (nC)  
31  
4.6  
Q
Q
gs (nC)  
gd (nC)  
17  
• Fully Avalanche Rated  
• Lead (Pb)-free Available  
Configuration  
Single  
D
DESCRIPTION  
D2PAK (TO-263)  
Third generation Power MOSFETs from Vishay provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and  
cost-effectiveness.  
I2PAK (TO-262)  
G
The D2PAK is a surface mount power package capable of  
the accommodating die sizes up to HEX-4. It provides the  
highest power capability and the lowest possible  
on-resistance in any existing surface mount package. The  
D2PAK is suitable for high current applications because of its  
low internal connection resistance and can dissipate up to  
G
D
S
S
N-Channel MOSFET  
2.0  
W in a typical surface mount application. The  
through-hole version (IRFBC30L, SiHFBC30L) is a available  
for low-profile applications.  
ORDERING INFORMATION  
Package  
D2PAK (TO-263)  
IRFBC30SPbF  
SiHFBC30S-E3  
IRFBC30S  
D2PAK (TO-263)  
I2PAK (TO-262)  
IRFBC30LPbF  
SiHFBC30L-E3  
IRFBC30L  
IRFBC30STRLPbFa  
Lead (Pb)-free  
SiHFBC30STL-E3a  
-
-
SnPb  
SiHFBC30S  
SiHFBC30L  
Note  
a. See device orientation.  
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted  
PARAMETER  
SYMBOL  
LIMIT  
600  
20  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
VGS  
V
TC = 25 °C  
TC =100°C  
3.6  
2.3  
14  
0.59  
290  
Continuous Drain Currente  
VGS at 10 V  
ID  
A
Pulsed Drain Currenta, e  
Linear Derating Factor  
Single Pulse Avalanche Energyb, e  
Avalanche Currenta  
IDM  
W/°C  
mJ  
A
EAS  
IAR  
3.6  
Repetiitive Avalanche Energya  
EAR  
7.4  
mJ  
TA = 25 °C  
C = 25 °C  
3.1  
74  
3.0  
Maximum Power Dissipation  
PD  
W
V/ns  
°C  
T
Peak Diode Recovery dV/dtc, e  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)  
dV/dt  
TJ, Tstg  
- 55 to + 150  
300d  
for 10 s  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).  
b. VDD = 50 V, starting TJ = 25 °C, L = 41 mH, RG = 25 Ω, IAS = 3.6 A (see fig. 12).  
c. ISD ≤ 3.6 A, dI/dt ≤ 60 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.  
d. 1.6 mm from case.  
e. Uses IRFBC30/SiHFBC30 data and test conditions.  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 91111  
S-Pending-Rev. A, 10-Jun-08  
www.vishay.com  
1
WORK-IN-PROGRESS  
12345678

中文翻译

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