IRFBC30S

更新时间： 2024-11-23 22:31:43

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	363K
描述
Power MOSFET(Vdss=600V, Rds(on)=2.2ohm, Id=3.6A)

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中文翻译

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数据手册

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IRFBC30S 数据手册

PD - 9.1015

IRFBC30S/L

PRELIMINARY

HEXFET^®Power MOSFET

l Surface Mount (IRFBC30S)

l Low-profile through-hole (IRFBC30L)

l Available in Tape & Reel (IRFBC30S)

l Dynamic dv/dt Rating

V_DSS= 600V

R_DS(on)= 2.2Ω

l 150°C Operating Temperature

l Fast Switching

l Fully Avalanche Rated

I_D= 3.6A

Description

Third generationHEXFETsfrominternationalRectifierprovidethedesignerwiththe

bestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceand

cost-effectiveness.

TheD ²Pak isasurfacemountpowerpackagecapableoftheaccommodatingdiesizes

up to HEX-4. It provides the highest power capability and the lowest possible on-

resistance in any existing surface mount package. The D²Pak is suitable for high

current applications because of its low internal connection resistance and can

dissipateupto2.0Winatypicalsurfacemountapplication. Thethrough-holeversion

(IRFBC30L)isavailableforlow-profileapplications.

Pa k

T O -2 6 2

Absolute Maximum Ratings

Parameter

Max.

3.6

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10Vꢀ

Pulsed Drain Current ꢀ

2.3

P_D@T_A= 25°C

P_D@T_C= 25°C

Power Dissipation

3.1

Power Dissipation

Linear Derating Factor

0.59

± 20

290

3.6

W/°C

V_GS

E_AS

I_AR

Gate-to-Source Voltage

Single Pulse Avalanche Energyꢀ

Avalanche Current

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt ꢀ

Operating Junction and

7.4

V/ns

3.0

-55 to + 150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

300 (1.6mm from case )

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

1.7

Units

R_θJC

R_θJA

°C/W

Junction-to-Ambient ( PCB Mounted,steady-state)**

–––

7/22/97

12 3 4 5 6 7...10

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