Datasheet > IRFBC30

IRFBC30

更新时间： 2024-11-23 22:31:43

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
8页	88K
描述
N - CHANNEL 600V - 1.8 ohm - 3.6A - TO-220 PowerMESH]II MOSFET

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IRFBC30 数据手册

IRFBC30

N - CHANNEL 600V - 1.8 Ω - 3.6A - TO-220

PowerMESH ΙΙ MOSFET

TYPE

IRFBC30

V_DSS

R_DS(on)

I_D

600 V

< 2.2 Ω

3.6 A

■

TYPICAL R_DS(on)= 1.8 Ω

EXTREMELY HIGH dv/dt CAPABILITY

100% AVALANCHE TESTED

VERY LOW INTRINSIC CAPACITANCES

GATE CHARGE MINIMIZED

DESCRIPTION

The PowerMESH ΙΙ is the evolution of the first

generation of MESH OVERLAY . The layout

refinements introduced greatly improve the

Ron*area figure of merit while keeping the device

at the leading edge for what concerns switching

speed, gate charge and ruggedness.

TO-220

APPLICATIONS

INTERNAL SCHEMATIC DIAGRAM

■

HIGH CURRENT, HIGH SPEED SWITCHING

SWITH MODE POWER SUPPLIES (SMPS)

DC-AC CONVERTERS FOR WELDING

EQUIPMENTAND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVER

ABSOLUTE MAXIMUM RATINGS

Symbol

V_DS

Parameter

Value

600

Unit

Drain-source Voltage (V_GS= 0)

V_DGR

V_GS

600

Drain- gate Voltage (R_GS= 20 k

Gate-source Voltage

)

Ω

I_D

Drain Current (continuous) at T_c= 25 ^oC

3.6

I_D

Drain Current (continuous) at T_c= 100 C

2.3

I_DM(• )

P_tot

Drain Current (pulsed)

Total Dissipation at T_c= 25 C

Derating Factor

0.6

W/^oC

V/ns

^oC

dv/dt(1) Peak Diode Recovery voltage slope

T_stg

Storage Temperature

-65 to 150

T_j

Max. Operating Junction Temperature

150

(•) Pulse width limited by safe operating area

( 1) I_SD≤3.6 A, di/dt ≤ 60 A/µs, V_DD≤ V_(BR)DSS, Tj ≤ T_JMAX

1/8

January 2000

12 3 4 5 6 7 8

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IRFBC30 替代型号

型号	品牌	替代类型	描述	数据表
SIHFBC30-E3	VISHAY	功能相似	Power MOSFET
SIHFBC30	VISHAY	功能相似	Power MOSFET

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