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IRFBC20STRL PDF预览

IRFBC20STRL

更新时间: 2024-11-01 05:39:27
品牌 Logo 应用领域
威世 - VISHAY 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
8页 247K
描述
Power MOSFET

IRFBC20STRL 技术参数

是否Rohs认证:不符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PSSO-G2针数:3
Reach Compliance Code:unknownHTS代码:8541.29.00.95
风险等级:5.03Is Samacsys:N
雪崩能效等级(Eas):84 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:600 V
最大漏极电流 (Abs) (ID):2.2 A最大漏极电流 (ID):2.2 A
最大漏源导通电阻:4.4 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSSO-G2元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):50 W最大脉冲漏极电流 (IDM):8 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRFBC20STRL 数据手册

 浏览型号IRFBC20STRL的Datasheet PDF文件第2页浏览型号IRFBC20STRL的Datasheet PDF文件第3页浏览型号IRFBC20STRL的Datasheet PDF文件第4页浏览型号IRFBC20STRL的Datasheet PDF文件第5页浏览型号IRFBC20STRL的Datasheet PDF文件第6页浏览型号IRFBC20STRL的Datasheet PDF文件第7页 
IRFBC20S, SiHFBC20S, IRFBC20L, SiHFBC20L  
Vishay Siliconix  
Power MOSFET  
FEATURES  
PRODUCT SUMMARY  
VDS (V)  
• Surface Mount (IRFBC20S/SiHFBC20S)  
600  
• Low-Profile Through-Hole (IRFBC20L/SiHFBC20L)  
Available  
• Available in Tape and Reel (IRFBC20S/SiHFBC20S)  
• Dynamic dV/dt Rating  
• 150 °C Operating Temperature  
• Fast Switching  
• Fully Avalanche Rated  
• Lead (Pb)-free Available  
DESCRIPTION  
RDS(on) (Ω)  
VGS = 10 V  
4.4  
RoHS*  
COMPLIANT  
Qg (Max.) (nC)  
18  
3.0  
Q
Q
gs (nC)  
gd (nC)  
8.9  
Configuration  
Single  
D
Third generation Power MOSFETs from Vishay provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and  
cost-effectiveness.  
D2PAK (TO-263)  
I2PAK (TO-262)  
The D2PAK is a surface mount power package capable of  
the accommodating die sizes up to HEX-4. It provides the  
highest power capability and the lowest possible  
on-resistance in any existing surface mount package. The  
D2PAK is suitable for high current applications because of its  
low internal connection resistance and can dissipate up to  
G
G
D
S
S
N-Channel MOSFET  
2.0  
W in a typical surface mount application. The  
through-hole version (IRFBC20L/SiHFBC20L) is a available  
for low-profile applications.  
ORDERING INFORMATION  
Package  
D2PAK (TO-263)  
D2PAK (TO-263)  
I2PAK (TO-262)  
IRFBC20SPbF  
SiHFBC20S-E3  
IRFBC20S  
IRFBC20STRLPbFa  
SiHFBC20STL-E3a  
IRFBC20STRLa  
IRFBC20LPbF  
SiHFBC20L-E3  
IRFBC20L  
Lead (Pb)-free  
SnPb  
SiHFBC20S  
SiHFBC20STLa  
SiHFBC20L  
Note  
a. See device orientation.  
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted  
PARAMETER  
SYMBOL  
LIMIT  
600  
20  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
V
VGS  
T
C = 25 °C  
2.2  
1.4  
8.0  
0.40  
84  
Continuous Drain Currente  
VGS at 10 V  
ID  
TC =100°C  
A
Pulsed Drain Currenta, e  
Linear Derating Factor  
Single Pulse Avalanche Energyb, e  
Avalanche Currenta  
IDM  
W/°C  
mJ  
A
EAS  
IAR  
2.2  
5.0  
3.1  
50  
Repetiitive Avalanche Energya  
EAR  
mJ  
T
A = 25 °C  
Maximum Power Dissipation  
Peak Diode Recovery dV/dtc, e  
PD  
W
V/ns  
°C  
TC = 25 °C  
dV/dt  
3.0  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)  
TJ, Tstg  
- 55 to + 150  
300d  
for 10 s  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).  
b. VDD = 50 V, starting TJ = 25 °C, L = 31 mH, RG = 25 Ω, IAS = 2.2 A (see fig. 12).  
c. ISD 2.2 A, dI/dt 40 A/µs, VDD VDS, TJ 150 °C.  
d. 1.6 mm from case.  
e. Uses IRFBC20/SiHFBC20 data and test conditions.  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 91107  
S-Pending-Rev. A, 03-Jun-08  
www.vishay.com  
1
WORK-IN-PROGRESS  

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