Datasheet > IRFBA90N20

IRFBA90N20

更新时间： 2024-10-29 22:07:55

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	100K
描述
Power MOSFET(Vdss=200V, Rds(on)max=0.023ohm, Id=98A)

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中文翻译

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数据手册

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IRFBA90N20 数据手册

PD - 94300

SMPS MOSFET

IRFBA90N20D

HEXFET^®Power MOSFET

Applications

l High frequency DC-DC converters

V_DSS

200V

R_DS(on)max

I_D

98A

0.023Ω

Benefits

l Low Gate-to-Drain Charge to Reduce

Switching Losses

l Fully Characterized Capacitance Including

Effective C_OSSto Simplify Design, (See

App. Note AN1001)

l Fully Characterized Avalanche Voltage

and Current

Super-220™

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

390

P_D@T_C= 25°C

Power Dissipation

650

W/°C

Linear Derating Factor

4.3

V_GS

dv/dt

T_J

Gate-to-Source Voltage

± 30

Peak Diode Recovery dv/dt

Operating Junction and

6.3

V/ns

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Recommended Clip Force

°C

300 (1.6mm from case )

Thermal Resistance

Parameter

Typ.

Max.

Units

R_θJC

R_θCS

R_θJA

Junction-to-Case

–––

0.50

–––

0.23

–––

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

°C/W

Notes through are on page 8

www.irf.com

09/06/01

12 3 4 5 6 7 8

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