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IRFBA1404 PDF预览

IRFBA1404

更新时间： 2024-09-12 22:51:35
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
9页 115K
描述
Power MOSFET(Vdss=40V, Rds(on)=3.7mohm, Id=206A)

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中文翻译

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IRFBA1404 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
包装说明：IN-LINE, R-PSIP-T3Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.21
Is Samacsys：N雪崩能效等级（Eas）：2000 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：40 V最大漏极电流 (Abs) (ID)：212 A
最大漏极电流 (ID)：212 A最大漏源导通电阻：0.0035 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-273AA
JESD-30 代码：R-PSIP-T3JESD-609代码：e3
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：175 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：IN-LINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：300 W
最大脉冲漏极电流 (IDM)：650 A认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：NO
端子面层：Matte Tin (Sn) - with Nickel (Ni) barrier端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

IRFBA1404 数据手册

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PD - 93806  
AUTOMOTIVE MOSFET  
IRFBA1404P  
HEXFET® Power MOSFET  
Typical Applications  
l
l
l
l
Anti-lock Braking Systems (ABS)  
Electric Power Steering (EPS)  
Electric Braking  
D
VDSS = 40V  
Radiator Fan Control  
Benefits  
l
l
l
l
l
l
l
Advanced Process Technology  
RDS(on) = 3.7mΩ  
Ultra Low On-Resistance  
G
Increase Current Handling Capability  
175°C Operating Temperature  
Fast Switching  
ID = 206A†  
S
Dynamic dv/dt Rating  
Repetitive Avalanche Allowed up to Tjmax  
Description  
Specifically designed for Automotive applications, this Stripe Planar  
design of HEXFET® Power MOSFETs utilizes the latest processing  
techniques to achieve extremely low on-resistance per silicon area.  
Additional features of this MOSFET are a 175oC junction operating  
temperature, fast switching speed and improved ruggedness in  
single and repetitive avalanche. The Super-220 TM is a package that  
has been designed to have the same mechanical outline and pinout  
as the industry standard TO-220 but can house a considerably  
larger silicon die. The result is significantly increased current  
handling capability over both the TO-220 and the much larger TO-  
247 package. The combination of extremely low on-resistance  
silicon and the Super-220 TM package makes it ideal to reduce the  
component count in multiparalled TO-220 applications, reduce  
system power dissipation, upgrade existing designs or have TO-247  
performance in a TO-220 outline. This package has been designed  
to meet automotive, Q101, qualification standard.  
Super-220™  
These benefits make this design an extremely efficient and reliable  
device for use in Automotive applications and a wide variety of other  
applications.  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current   
206†  
145†  
A
650  
PD @TC = 25°C  
Power Dissipation  
300  
W
W/°C  
V
Linear Derating Factor  
2.0  
± 20  
VGS  
EAS  
IAR  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy‚  
Avalanche Current  
See Fig.12a, 12b, 15, 16  
mJ  
A
EAR  
dv/dt  
TJ  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt ƒ  
Operating Junction and  
30  
5.0  
mJ  
V/ns  
-40 to + 175  
-55 to + 175  
300 (1.6mm from case )  
20  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
Recommended clip force  
°C  
N
www.irf.com  
1
10/24/00  
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