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IRFB9N60A PDF预览

IRFB9N60A

更新时间: 2024-10-29 22:26:11
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
8页 137K
描述
Power MOSFET(Vdss=600V, Rds(on)=0.75ohm, Id=9.2A)

IRFB9N60A 数据手册

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PD - 91811  
IRFB9N60A  
HEXFET® Power MOSFET  
l Dynamic dv/dt Rating  
l Repetitive Avalanche Rated  
l Fast Switching  
D
VDSS = 600V  
l Ease of Paraleling  
l Simple Drive Requirements  
R
DS(on) = 0.75Ω  
G
ID = 9.2A  
S
Description  
Third Generation HEXFETs from International Rectifier provide the designer  
with the best combination of fast switching, ruggedized device design, low on-  
resistance and cost-effectiveness.  
The TO-220 package is universally preferred for all commercial-industrial  
applications at power dissipation levels to approximately 50 watts. The low  
thermal resistance and low package cost of the TO-220 contribute to its wide  
acceptance throughout the industry.  
TO-220AB  
Absolute Maximum Ratings  
Parameter  
Max.  
9.2  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current   
5.8  
A
37  
PD @TC = 25°C  
Power Dissipation  
170  
1.3  
W
W/°C  
V
Linear Derating Factor  
VGS  
EAS  
IAR  
Gate-to-Source Voltage  
± 30  
290  
9.2  
Single Pulse Avalanche Energy‚  
Avalanche Current  
mJ  
A
EAR  
dv/dt  
TJ  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt ƒ  
Operating Junction and  
17  
mJ  
V/ns  
5.0  
-55 to + 150  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
Mounting torque, 6-32 or M3 srew  
°C  
300 (1.6mm from case )  
10 lbf•in (1.1N•m)  
Thermal Resistance  
Parameter  
Junction-to-Case  
Typ.  
–––  
Max.  
Units  
RθJC  
0.75  
–––  
62  
RθCS  
Case-to-Sink, Flat, Greased Surface  
Junction-to-Ambient  
0.50  
–––  
°C/W  
RθJA  
www.irf.com  
1
10/7/98  

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