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IRFB9N30A PDF预览

IRFB9N30A

更新时间: 2024-11-19 22:26:07
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
8页 138K
描述
Power MOSFET(Vdss=300V, Rds(on)=0.45ohm, Id=9.3A)

IRFB9N30A 数据手册

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PD- 91832  
IRFB9N30A  
HEXFET® Power MOSFET  
l Dynamic dv/dt Rating  
l Repetitive Avalanche Rated  
l Fast Switching  
D
VDSS = 300V  
l Ease of Paraleling  
l Simple Drive Requirements  
RDS(on) = 0.45Ω  
G
ID = 9.3A  
S
Description  
Third Generation HEXFETs from International Rectifier provide the designer  
with the best combination of fast switching, ruggedized device design, low on-  
resistance and cost-effectiveness.  
The TO-220 package is universally preferred for all commercial-industrial  
applications at power dissipation levels to approximately 50 watts. The low  
thermal resistance and low package cost of the TO-220 contribute to its wide  
acceptance throughout the industry.  
TO-220AB  
Absolute Maximum Ratings  
Parameter  
Max.  
9.3  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current   
5.9  
A
37  
PD @TC = 25°C  
Power Dissipation  
96  
W
W/°C  
V
Linear Derating Factor  
0.77  
± 30  
160  
9.3  
VGS  
EAS  
IAR  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy‚  
Avalanche Current  
mJ  
A
EAR  
dv/dt  
TJ  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt ƒ  
Operating Junction and  
9.6  
mJ  
V/ns  
4.6  
-55 to + 150  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
Mounting torque, 6-32 or M3 srew  
°C  
300 (1.6mm from case )  
10 lbf•in (1.1N•m)  
Thermal Resistance  
Parameter  
Junction-to-Case  
Typ.  
–––  
Max.  
Units  
RθJC  
1.3  
–––  
62  
RθCS  
Case-to-Sink, Flat, Greased Surface  
Junction-to-Ambient  
0.50  
–––  
°C/W  
RθJA  
www.irf.com  
1
10/7/98  

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