IRFB9N60

更新时间： 2024-11-19 22:26:11

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	137K
描述
Power MOSFET(Vdss=600V, Rds(on)=0.75ohm, Id=9.2A)

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IRFB9N60 数据手册

PD - 91811

IRFB9N60A

HEXFET^®Power MOSFET

l Dynamic dv/dt Rating

l Repetitive Avalanche Rated

l Fast Switching

V_DSS= 600V

l Ease of Paraleling

l Simple Drive Requirements

_DS(on)= 0.75Ω

I_D= 9.2A

Description

Third Generation HEXFETs from International Rectifier provide the designer

with the best combination of fast switching, ruggedized device design, low on-

resistance and cost-effectiveness.

The TO-220 package is universally preferred for all commercial-industrial

applications at power dissipation levels to approximately 50 watts. The low

thermal resistance and low package cost of the TO-220 contribute to its wide

acceptance throughout the industry.

TO-220AB

Absolute Maximum Ratings

Parameter

Max.

9.2

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

5.8

P_D@T_C= 25°C

Power Dissipation

170

1.3

W/°C

Linear Derating Factor

V_GS

E_AS

I_AR

Gate-to-Source Voltage

± 30

290

9.2

Single Pulse Avalanche Energy

Avalanche Current

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

V/ns

5.0

-55 to + 150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 srew

°C

300 (1.6mm from case )

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

Units

R_θJC

0.75

–––

R_θCS

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

0.50

–––

°C/W

R_θJA

www.irf.com

10/7/98

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