IRFB9N60A
Vishay Siliconix
www.vishay.com
Power MOSFET
FEATURES
D
• Low gate charge Qg results in simple drive
requirement
TO-220AB
Available
• Improved gate, avalanche and dynamic dV/dt
ruggedness
Available
G
• Fully characterized capacitance and avalanche voltage
and current
S
D
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
S
G
N-Channel MOSFET
APPLICATIONS
• Switch mode power supply (SMPS)
• Uninterruptible power supply
• High speed power switching
PRODUCT SUMMARY
VDS (V)
600
RDS(on) (Ω)
VGS = 10 V
0.75
Qg max. (nC)
49
13
APPLICABLE OFF LINE SMPS TOPOLOGIES
• Active clamped forward
Qgs (nC)
gd (nC)
Q
20
• Main switch
Configuration
Single
ORDERING INFORMATION
Package
TO-220AB
Lead (Pb)-free
IRFB9N60APbF
IRFB9N60APbF-BE3
Lead (Pb)-free and halogen-free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
600
30
UNIT
Drain-source voltage
Gate-source voltage
VDS
V
VGS
T
C = 25 °C
9.2
Continuous drain current
VGS at 10 V
ID
TC = 100 °C
5.8
A
Pulsed drain currenta
IDM
37
Linear derating factor
1.3
W/°C
mJ
A
Single pulse avalanche energy b
Repetitive avalanche current a
Repetitive avalanche energy a
Maximum power dissipation
EAS
IAR
290
9.2
EAR
17
mJ
W
T
C = 25 °C
PD
170
5.0
Peak diode recovery dV/dt c
dV/dt
TJ, Tstg
V/ns
Operating junction and storage temperature range
Soldering recommendations (peak temperature) d
-55 to +150
300
10
°C
For 10 s
lbf · in
N · m
Mounting torque
6-32 or M3 screw
1.1
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. Starting TJ = 25 °C, L = 6.8 mH, Rg = 25 Ω, IAS = 9.2 A (see fig. 12)
c. ISD ≤ 9.2 A, dI/dt ≤ 50 A/μs, VDD ≤ VDS, TJ ≤ 150 °C
d. 1.6 mm from case
S21-0867-Rev. E, 16-Aug-2021
Document Number: 91103
1
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000