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IRFB9N30APBF PDF预览

IRFB9N30APBF

更新时间: 2024-11-24 05:39:27
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
8页 176K
描述
Power MOSFET

IRFB9N30APBF 数据手册

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IRFB9N30A, SiHFB9N30A  
Vishay Siliconix  
Power MOSFET  
FEATURES  
PRODUCT SUMMARY  
• Dynamic dv/dt Rating  
• Repetitive Avalanche Rated  
• Fast Switching  
VDS (V)  
300  
Available  
RDS(on) (Ω)  
VGS = 10 V  
0.45  
RoHS*  
COMPLIANT  
Qg (Max.) (nC)  
33  
6.9  
Q
Q
gs (nC)  
gd (nC)  
• Ease of Paralleling  
12  
• Simple Drive Requirements  
• Lead (Pb)-free Available  
Configuration  
Single  
D
TO-220  
DESCRIPTION  
Third Generation Power MOSFETs from Vishay provides the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and cost  
effectiveness.  
The TO-220 package is universally preferred for all  
commercial-industrial applications at lower dissipation levels  
to approximately 50 watts. The low thermal resistance and  
low package cost of the TO-220 contribute to its wide  
acceptance throughout the industry.  
G
S
D
S
N-Channel MOSFET  
G
ORDERING INFORMATION  
Package  
TO-220  
IRFB9N30APbF  
SiHFB9N30A-E3  
IRFB9N30A  
Lead (Pb)-free  
SnPb  
SiHFB9N30A  
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted  
PARAMETER  
SYMBOL  
LIMIT  
UNIT  
Gate-Source Voltage  
VGS  
30  
9.3  
V
TC = 25 °C  
TC =100°C  
Continuous Drain Current  
VGS at 10 V  
ID  
A
5.9  
Pulsed Drain Currenta  
IDM  
37  
Linear Derating Factor  
0.77  
160  
W/°C  
mJ  
A
Single Pulse Avalanche Energyb  
Repetitive Avalanche Currenta  
Repetitive Avalanche Energya  
EAS  
IAR  
9.3  
EAR  
9.6  
mJ  
W
Maximum Power Dissipation  
T
C = 25 °C  
PD  
96  
Peak Diode Recovery dV/dtc  
dV/dt  
TJ, Tstg  
4.6  
V/ns  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)  
- 55 to + 150  
300d  
10  
°C  
for 10 s  
6-32 or M3 screw  
lbf · in  
N · m  
Mounting Torque  
1.1  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).  
b. Starting TJ = 25 °C, L = 3.7 mH, RG = 25 Ω, IAS = 9.3 A (see fig. 12).  
c. ISD 9.3 A, dI/dt 270 A/μs, VDD VDS, TJ 150 °C.  
d. 1.6 mm from case.  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 91102  
S-Pending-Rev. A, 03-Jun-08  
www.vishay.com  
1
WORK-IN-PROGRESS  

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