Datasheet > IRFB9N30A

IRFB9N30A

更新时间： 2024-11-20 05:39:27

品牌	Logo	应用领域
威世 - VISHAY		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
8页	176K
描述
Power MOSFET

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技术参数
数据手册

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IRFB9N30A 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.89	Base Number Matches：	1

IRFB9N30A 数据手册

IRFB9N30A, SiHFB9N30A

Vishay Siliconix

Power MOSFET

FEATURES

PRODUCT SUMMARY

• Dynamic dv/dt Rating

• Repetitive Avalanche Rated

• Fast Switching

V_DS(V)

300

Available

R_DS(on)(Ω)

V_GS= 10 V

0.45

RoHS*

COMPLIANT

Q_g(Max.) (nC)

6.9

_gs(nC)

_gd(nC)

• Ease of Paralleling

• Simple Drive Requirements

• Lead (Pb)-free Available

Configuration

Single

TO-220

DESCRIPTION

Third Generation Power MOSFETs from Vishay provides the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and cost

effectiveness.

The TO-220 package is universally preferred for all

commercial-industrial applications at lower dissipation levels

to approximately 50 watts. The low thermal resistance and

low package cost of the TO-220 contribute to its wide

acceptance throughout the industry.

N-Channel MOSFET

ORDERING INFORMATION

Package

TO-220

IRFB9N30APbF

SiHFB9N30A-E3

IRFB9N30A

Lead (Pb)-free

SnPb

SiHFB9N30A

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

UNIT

Gate-Source Voltage

V_GS

9.3

T_C= 25 °C

T_C=100°C

Continuous Drain Current

V_GSat 10 V

I_D

5.9

Pulsed Drain Current^a

I_DM

Linear Derating Factor

0.77

160

W/°C

Single Pulse Avalanche Energy^b

Repetitive Avalanche Current^a

Repetitive Avalanche Energy^a

E_AS

I_AR

9.3

E_AR

9.6

Maximum Power Dissipation

_C= 25 °C

P_D

Peak Diode Recovery dV/dt^c

dV/dt

T_J, T_stg

4.6

V/ns

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

- 55 to + 150

300^d

°C

for 10 s

6-32 or M3 screw

lbf · in

N · m

Mounting Torque

1.1

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Starting T_J= 25 °C, L = 3.7 mH, R_G= 25 Ω, I_AS= 9.3 A (see fig. 12).

c. I_SD≤ 9.3 A, dI/dt ≤ 270 A/μs, V_DD≤ V_DS, T_J≤ 150 °C.

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91102

S-Pending-Rev. A, 03-Jun-08

www.vishay.com

WORK-IN-PROGRESS

12 3 4 5 6 7 8

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