PD -97693
IRFB812PbF
HEXFET® Power MOSFET
Applications
• Zero Voltage Switching SMPS
• Uninterruptible Power Supplies
• Motor Control applications
Trr typ.
VDSS RDS(on)
ID
typ.
500V
75ns 3.6A
1.75Ω
Features and Benefits
• Fast body diode eliminates the need for external
diodes in ZVS applications.
• Lower Gate charge results in simpler drive requirements.
• Higher Gate voltage threshold offers improved noise
immunity.
TO-220AB
Absolute Maximum Ratings
Parameter
Max.
3.6
Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
2.3
A
Pulsed Drain Current
IDM
14.4
78
PD @TC = 25°C Power Dissipation
Linear Derating Factor
W
W/°C
V
0.63
± 20
VGS
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
dv/dt
TJ
32
V/ns
-55 to + 150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
°C
300 (1.6mm from case )
10lb in (1.1N m)
Diode Characteristics
Symbol
Parameter
Continuous Source Current
Min. Typ. Max. Units
––– ––– 3.6
Conditions
MOSFET symbol
D
I
I
S
(Body Diode)
Pulsed Source Current
A
showing the
integral reverse
G
––– ––– 14.4
SM
S
(Body Diode)
p-n junction diode.
T = 25°C, I = 3.6A, V = 0V
V
Diode Forward Voltage
Reverse Recovery Time
––– ––– 1.2
––– 75 110
V
SD
J
S
GS
t
ns T = 25°C, I = 3.6A
J F
rr
––– 94 140
TJ = 125°C, di/dt = 100A/μs
Q
T = 25°C, I = 3.6A, V = 0V
Reverse Recovery Charge
––– 135 200 nC
rr
J
S
GS
––– 220 330
TJ = 125°C, di/dt = 100A/μs
IRRM
T = 25°C
J
Reverse Recovery Current
Forward Turn-On Time
––– 3.2 4.8
A
t
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
on
Notes through are on page 2
www.irf.com
1
6/23/11