Datasheet > IRFB812PBF

IRFB812PBF

更新时间： 2024-11-20 12:28:39

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	260K
描述
HEXFETPower MOSFET

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中文翻译

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数据手册

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IRFB812PBF 数据手册

PD -97693

IRFB812PbF

HEXFET^®Power MOSFET

Applications

• Zero Voltage Switching SMPS

• Uninterruptible Power Supplies

• Motor Control applications

Trr _typ.

V_DSSR_DS(on)

I_D

typ.

500V

75ns 3.6A

1.75Ω

Features and Benefits

• Fast body diode eliminates the need for external

diodes in ZVS applications.

• Lower Gate charge results in simpler drive requirements.

• Higher Gate voltage threshold offers improved noise

immunity.

TO-220AB

Absolute Maximum Ratings

Parameter

Max.

3.6

Units

I_D@ T_C= 25°C Continuous Drain Current, V_GS@ 10V

I_D@ T_C= 100°C Continuous Drain Current, V_GS@ 10V

2.3

Pulsed Drain Current

I_DM

14.4

P_D@T_C= 25°C Power Dissipation

Linear Derating Factor

W/°C

0.63

± 20

V_GS

Gate-to-Source Voltage

Peak Diode Recovery dv/dt

Operating Junction and

dv/dt

T_J

V/ns

-55 to + 150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw

°C

300 (1.6mm from case )

10lb in (1.1N m)

Diode Characteristics

Symbol

Parameter

Continuous Source Current

Min. Typ. Max. Units

––– ––– 3.6

Conditions

MOSFET symbol

(Body Diode)

Pulsed Source Current

showing the

integral reverse

––– ––– 14.4

(Body Diode)

p-n junction diode.

T = 25°C, I = 3.6A, V = 0V

Diode Forward Voltage

Reverse Recovery Time

––– ––– 1.2

––– 75 110

ns T = 25°C, I = 3.6A

J F

––– 94 140

T_J= 125°C, di/dt = 100A/μs

T = 25°C, I = 3.6A, V = 0V

Reverse Recovery Charge

––– 135 200 nC

––– 220 330

T_J= 125°C, di/dt = 100A/μs

I_RRM

T = 25°C

Reverse Recovery Current

Forward Turn-On Time

––– 3.2 4.8

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes through are on page 2

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6/23/11

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