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IRFB3306GPBF

更新时间： 2024-02-03 05:34:35

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	293K
描述
HEXFET Power MOSFET

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数据手册

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IRFB3306GPBF 数据手册

IRFB3306GPbF

Driver Gate Drive

P.W.

Period

D.U.T

Period

D =

=10V

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

D.U.T. I Waveform

Reverse

Recovery

Current

Body Diode Forward

Current

di/dt

D.U.T. V Waveform

Diode Recovery

dv/dt

V_DD

Re-Applied

Voltage

• dv/dt controlled by R_G

R_G

Body Diode

Forward Drop

• Driver same type as D.U.T.

• I_SDcontrolled by Duty Factor "D"

• D.U.T. - Device Under Test

Inductor Current

Inductor Curent

Ripple ≤ 5%

* V_GS= 5V for Logic Level Devices

Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel

HEXFET^®Power MOSFETs

(BR)DSS

15V

DRIVER

D.U.T

20V

Ω

0.01

Fig 22b. Unclamped Inductive Waveforms

Fig 22a. Unclamped Inductive Test Circuit

L_D

V_DS

90%

V_DD

10%

V_GS

D.U.T

V_GS

Pulse Width < 1µs

Duty Factor < 0.1%

t_d(on)

t_d(off)

t_r

t_f

Fig 23a. Switching Time Test Circuit

Fig 23b. Switching Time Waveforms

Current Regulator

Same Type as D.U.T.

Vds

Vgs

50KΩ

.2µF

12V

.3µF

D.U.T.

Vgs(th)

3mA

Qgs1

Qgs2

Qgd

Qgodr

Current Sampling Resistors

Fig 24a. Gate Charge Test Circuit

Fig 24b. Gate Charge Waveform

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