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IRFB3306GPBF

更新时间： 2024-02-09 06:59:58

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	293K
描述
HEXFET Power MOSFET

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IRFB3306GPBF 数据手册

PD - 96211

IRFB3306GPbF

HEXFET^®Power MOSFET

Applications

l High Efficiency Synchronous Rectification in SMPS

l Uninterruptible Power Supply

l High Speed Power Switching

V_DSS

R_DS(on)typ.

60V

3.3m

4.2m

max.

l Hard Switched and High Frequency Circuits

I_D

160A

(Silicon Limited)

120A

(Package Limited)

Benefits

l Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

l Fully Characterized Capacitance and Avalanche

SOA

l Enhanced body diode dV/dt and dI/dt Capability

l Lead-Free

TO-220AB

IRFB3306GPbF

l Halogen-Free

Gate

Drain

Source

Absolute Maximum Ratings

Symbol

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_D@ T_C= 25°C

I_DM

Parameter

Max.

160

Units

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

Continuous Drain Current, V_GS@ 10V (Wire Bond Limited)

Pulsed Drain Current

110

120

620

P_D@T_C= 25°C

230

Maximum Power Dissipation

1.5

Linear Derating Factor

W/°C

V_GS

± 20

Gate-to-Source Voltage

Peak Diode Recovery

dv/dt

T_J

V/ns

-55 to + 175

Operating Junction and

T_STG

Storage Temperature Range

°C

300

Soldering Temperature, for 10 seconds

(1.6mm from case)

10lbf in (1.1N m)

Mounting torque, 6-32 or M3 screw

Avalanche Characteristics

Single Pulse Avalanche Energy

E_{AS (Thermally limited)}

184

Avalanche Current

I_AR

See Fig. 14, 15, 22a, 22b,

Repetitive Avalanche Energy

E_AR

Thermal Resistance

Symbol

Parameter

Typ.

–––

Max.

0.65

–––

Units

R_θJC

Junction-to-Case

R_θCS

R_θJA

0.50

–––

Case-to-Sink, Flat Greased Surface , TO-220

Junction-to-Ambient, TO-220

°C/W

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01/06/09

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