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IRF7493

更新时间: 2024-10-31 22:51:35
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 156K
描述
HEXFET Power MOSFET

IRF7493 数据手册

 浏览型号IRF7493的Datasheet PDF文件第2页浏览型号IRF7493的Datasheet PDF文件第3页浏览型号IRF7493的Datasheet PDF文件第4页浏览型号IRF7493的Datasheet PDF文件第5页浏览型号IRF7493的Datasheet PDF文件第6页浏览型号IRF7493的Datasheet PDF文件第7页 
PD - 94654B  
IRF7493  
HEXFET® Power MOSFET  
Applications  
l High frequency DC-DC converters  
VDSS  
RDS(on) max  
Qg (typ.)  
15m:@VGS=10V  
80V  
35nC  
Benefits  
l Low Gate-to-Drain Charge to Reduce  
Switching Losses  
A
A
1
8
S
D
l Fully Characterized Capacitance Including  
Effective COSS to Simplify Design, (See  
App. Note AN1001)  
l Fully Characterized Avalanche Voltage  
and Current  
2
7
S
D
3
6
S
D
4
5
G
D
SO-8  
Top View  
Absolute Maximum Ratings  
Parameter  
Drain-to-Source Voltage  
Max.  
80  
Units  
V
VDS  
V
Gate-to-Source Voltage  
± 20  
9.3  
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
@ TC = 25°C  
D
D
@ TC = 70°C  
7.4  
A
74  
DM  
Maximum Power Dissipation  
Maximum Power Dissipation  
P
P
@TC = 25°C  
@TC = 70°C  
2.5  
W
D
D
1.6  
Linear Derating Factor  
Operating Junction and  
0.02  
W/°C  
°C  
T
-55 to + 150  
J
T
Storage Temperature Range  
STG  
Thermal Resistance  
Parameter  
Junction-to-Lead  
Junction-to-Ambient  
Typ.  
–––  
Max.  
20  
Units  
RθJC  
RθJA  
–––  
50  
Notes  through are on page 9  
www.irf.com  
1
7/29/03  

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Power Field-Effect Transistor, 7.3A I(D), 100V, 0.022ohm, 1-Element, N-Channel, Silicon, M