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IRF7492TRPBF PDF预览

IRF7492TRPBF

更新时间: 2024-11-20 12:32:23
品牌 Logo 应用领域
英飞凌 - INFINEON 转换器
页数 文件大小 规格书
8页 189K
描述
High frequency DC-DC converters

IRF7492TRPBF 数据手册

 浏览型号IRF7492TRPBF的Datasheet PDF文件第2页浏览型号IRF7492TRPBF的Datasheet PDF文件第3页浏览型号IRF7492TRPBF的Datasheet PDF文件第4页浏览型号IRF7492TRPBF的Datasheet PDF文件第5页浏览型号IRF7492TRPBF的Datasheet PDF文件第6页浏览型号IRF7492TRPBF的Datasheet PDF文件第7页 
PD - 95287A  
IRF7492PbF  
HEXFET® Power MOSFET  
VDSS  
200V  
RDS(on) max  
ID  
Applications  
l High frequency DC-DC converters  
l Lead-Free  
79mW@VGS = 10V 3.7A  
Benefits  
A
A
l Low Gate to Drain Charge to Reduce  
Switching Losses  
l Fully Characterized Capacitance Including  
Effective COSS to Simplify Design, (See  
App. Note AN1001)  
1
2
3
4
8
S
S
S
G
D
7
D
6
D
5
D
l Fully Characterized Avalanche Voltage  
and Current  
SO-8  
Top View  
Absolute Maximum Ratings  
Parameter  
Drain-Source Voltage  
Max.  
200  
Units  
V
VDS  
VGS  
Gate-to-Source Voltage  
± 20  
V
ID @ TA = 25°C  
ID @ TA = 70°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current   
3.7  
3.0  
A
30  
PD @TA = 25°C  
Power Dissipation„  
2.5  
W
Linear Derating Factor  
0.02  
W/°C  
V/ns  
dv/dt  
TJ  
Peak Diode Recovery dv/dt †  
Operating Junction and  
9.5  
-55 to + 150  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
°C  
300 (1.6mm from case )  
Thermal Resistance  
Symbol  
RθJL  
RθJA  
Parameter  
Junction-to-Drain Lead  
Junction-to-Ambient „  
Typ.  
–––  
–––  
Max.  
20  
50  
Units  
°C/W  
Notes  through †are on page 8  
www.irf.com  
1
02/23/07  

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