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IRF7389TRPBF PDF预览

IRF7389TRPBF

更新时间: 2024-11-23 12:32:19
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
10页 264K
描述
Generation V Technology

IRF7389TRPBF 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-G8Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:15 weeks
风险等级:0.78其他特性:AVALANCHE RATED, ULTRA LOW RESISTANCE
雪崩能效等级(Eas):82 mJ配置:COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (ID):7.3 A
最大漏源导通电阻:0.029 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:MS-012AAJESD-30 代码:R-PDSO-G8
湿度敏感等级:1元件数量:2
端子数量:8工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL AND P-CHANNEL最大脉冲漏极电流 (IDM):30 A
表面贴装:YES端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRF7389TRPBF 数据手册

 浏览型号IRF7389TRPBF的Datasheet PDF文件第2页浏览型号IRF7389TRPBF的Datasheet PDF文件第3页浏览型号IRF7389TRPBF的Datasheet PDF文件第4页浏览型号IRF7389TRPBF的Datasheet PDF文件第5页浏览型号IRF7389TRPBF的Datasheet PDF文件第6页浏览型号IRF7389TRPBF的Datasheet PDF文件第7页 
PD - 95462  
IRF7389PbF  
HEXFET® Power MOSFET  
l Generation V Technology  
l Ultra Low On-Resistance  
l Complimentary Half Bridge  
l Surface Mount  
l Fully Avalanche Rated  
l Lead-Free  
N-CHANNEL MOSFET  
N-Ch P-Ch  
1
8
D
D
S1  
G1  
2
7
VDSS 30V  
-30V  
3
4
6
5
S2  
G2  
D
D
P-CHANNEL MOSFET  
RDS(on) 0.0290.058Ω  
Top View  
Description  
Fifth Generation HEXFETs from International Rectifier  
utilize advanced processing techniques to achieve  
extremely low on-resistance per silicon area. This  
benefit, combined with the fast switching speed and  
ruggedized device design that HEXFET Power  
MOSFETs are well known for, provides the designer  
with an extremely efficient and reliable device for use  
in a wide variety of applications.  
The SO-8 has been modified through a customized  
leadframe for enhanced thermal characteristics and  
multiple-die capability making it ideal in a variety of  
power applications. With these improvements,  
multiple devices can be used in an application with  
dramatically reduced board space. The package is  
designed for vapor phase, infra red, or wave soldering  
techniques.  
SO-8  
Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted)  
Symbol  
Maximum  
Units  
N-Channel  
P-Channel  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
VGS  
30  
-30  
V
± 20  
TA = 25°C  
TA = 70°C  
7.3  
5.9  
30  
-5.3  
-4.2  
-30  
Continuous Drain Current  
ID  
A
Pulsed Drain Current  
IDM  
IS  
Continuous Source Current (Diode Conduction)  
2.5  
-2.5  
TA = 25°C  
TA = 70°C  
2.5  
1.6  
Maximum Power Dissipation ꢀ  
P
D
W
Single Pulse Avalanche Energy  
Avalanche Current  
EAS  
IAR  
82  
140  
-2.8  
mJ  
A
4.0  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt ‚  
Junction and Storage Temperature Range  
EAR  
0.20  
mJ  
dv/dt  
TJ,TSTG  
3.8  
-2.2  
V/ ns  
-55 to + 150 °C  
Thermal Resistance Ratings  
Parameter  
Symbol  
Limit  
Units  
Maximum Junction-to-Ambient ꢀ  
RθJA  
50  
°C/W  
www.irf.com  
1
6/29/04  

IRF7389TRPBF 替代型号

型号 品牌 替代类型 描述 数据表
IRF7389TR INFINEON

完全替代

Generation v technology
IRF7319TRPBF INFINEON

类似代替

GenarafionV Technology
IRF7389PBF INFINEON

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