是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, R-PDSO-G8 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | Factory Lead Time: | 15 weeks |
风险等级: | 0.78 | 其他特性: | AVALANCHE RATED, ULTRA LOW RESISTANCE |
雪崩能效等级(Eas): | 82 mJ | 配置: | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE |
最小漏源击穿电压: | 30 V | 最大漏极电流 (ID): | 7.3 A |
最大漏源导通电阻: | 0.029 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | MS-012AA | JESD-30 代码: | R-PDSO-G8 |
湿度敏感等级: | 1 | 元件数量: | 2 |
端子数量: | 8 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL AND P-CHANNEL | 最大脉冲漏极电流 (IDM): | 30 A |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
IRF7389TR | INFINEON |
完全替代 |
Generation v technology | |
IRF7319TRPBF | INFINEON |
类似代替 |
GenarafionV Technology | |
IRF7389PBF | INFINEON |
类似代替 |
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型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRF740 | VISHAY |
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Power MOSFET | |
IRF740 | ISC |
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N-Channel MOSFET Transistor | |
IRF740 | SUNTAC |
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POWER MOSFET | |
IRF740 | STMICROELECTRONICS |
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N - CHANNEL 400V - 0.48 ohm - 10 A - TO-220 PowerMESH] MOSFET | |
IRF740 | INTERSIL |
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10A, 400V, 0.550 Ohm, N-Channel Power MOSFET | |
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N-Channel Power MOSFETs, 10A, 350V/400V | |
IRF740 | SAMSUNG |
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Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Met | |
IRF740 | DCCOM |
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TECHNICAL SPECIFICATIONS OF N-CHANNEL POWER MOSFET | |
IRF740 | NJSEMI |
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Trans MOSFET N-CH 400V 10A 3-Pin(3+Tab) TO-220AB | |
IRF740 | FOSHAN |
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TO-220 |