Datasheet > IRF740

IRF740

更新时间： 2024-11-23 05:39:27

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管场效应晶体管开关脉冲局域网
页数	文件大小	规格书
2页	241K
描述
N-Channel MOSFET Transistor

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中文翻译

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数据手册

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IRF740 数据手册

INCHANGE Semiconductor

isc Product Specification

isc N-Channel MOSFET Transistor

IRF740

DESCRIPTION

·Drain Current –I_D= 10A@ T_C=25℃

·Drain Source Voltage-

: V_DSS= 400V(Min)

·Static Drain-Source On-Resistance

: R_DS(on)= 0.55Ω(Max)

·Fast Switching Speed

APPLICATIONS

·Designed especially for high voltage,high speed applications,

such as off-line switching power supplies , UPS,AC and DC

motor controls,relay and solenoid drivers.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_DSS

V_GS

I_D

VALUE

400

UNIT

ARAMETER

Drain-Source Voltage (V_GS=0)

Gate-Source Voltage

±20

Drain Current-continuous@ TC=25℃

Total Dissipation@TC=25℃

Max. Operating Junction Temperature

Storage Temperature Range

P_tot

125

T_j

150

℃

T_stg

-65~150

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

℃/W

R_{th j-c}

Thermal Resistance,Junction to Case

1.0

isc Website：www.iscsemi.cn

中文翻译

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