Datasheet > IRF7341GPBF

IRF7341GPBF

更新时间： 2024-09-26 01:17:11

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	205K
描述
HEXFETÂ® Power MOSFET

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IRF7341GPBF 数据手册

IRF7341GPbF

HEXFET^®Power MOSFET

• Advanced Process Technology

• Dual N-Channel MOSFET

• Ultra Low On-Resistance

• 175°COperatingTemperature

• Repetitive Avalanche Allowed up to Tjmax

• Lead-Free

V_DSS

55V

R_DS(on)max

0.050@V_GS= 10V

0.065@V_GS= 4.5V

I_D

5.1A

4.42A

• Halogen-Free

Description

TheseHEXFET®PowerMOSFET’sinaDualSO-8package

utilizethelastestprocessingtechniquestoachieveextremely

lowon-resistancepersiliconarea.Additionalfeaturesofthese

HEXFET Power MOSFET’s are a 175°C junction operating

temperature, fast switching speed and improved repetitive

avalancherating.Thesebenefitscombinetomakethisdesign

an extremely efficient and reliable device for use in a wide

variety of other applications.

SO-8

Top View

The 175°C rating for the SO-8 package provides improved

thermal performance with increased safe operating area and

dualMOSFETdiecapabilitymakeitidealinavarietyofpower

applications. Thisdual, surfacemountSO-8candramatically

reduce board space and is also available in Tape & Reel.

Standard Pack

Form

Tube/Bulk

Base Part Number

Package Type

Orderable Part Number

Quantity

4000

IRF7341GPbF

IRF7341GTRPbF

IRF7341GPbF

SO-8

Tape and Reel

Absolute Maximum Ratings

Parameter

Max.

Units

V_DS

Drain-Source Voltage

5.1

4.2

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

P_D@T_A= 25°C

P_D@T_A= 70°C

Maximum Power Dissipation

Linear Derating Factor

2.4

1.7

mW/°C

V_GS

Gate-to-Source Voltage

± 20

140

5.1

E_AS

Single Pulse Avalanche Energy

Avalanche Current

I_AR

E_AR

Repetitive Avalanche Energy

Junction and Storage Temperature Range

See Fig. 14, 15, 16

-55 to + 175

°C

T_J, T_STG

Thermal Resistance

Parameter

Max.

Units

R_θJA

Maximum Junction-to-Ambient

62.5

°C/W

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February 20, 2014

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