IRF7343

更新时间： 2024-09-16 22:51:35

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管开关脉冲光电二极管局域网
页数	文件大小	规格书
10页	145K
描述
HEXFET Power MOSFET

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中文翻译

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数据手册
替代型号

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IRF7343 数据手册

PD-91709

IRF7343

HEXFET^®Power MOSFET

l Generation V Technology

l Ultra Low On-Resistance

l Dual N and P Channel MOSFET

l Surface Mount

N -C H A N N EL M O S FE T

N-Ch P-Ch

D 1

G 1

V_DSS55V

-55V

D 2

l Fully Avalanche Rated

G 2

P -C H A N N E L M O S F E T

R_DS(on)0.050Ω 0.105Ω

Description

Top View

FifthGenerationHEXFETsfromInternationalRectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power

MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use

in a wide variety of applications.

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and

multiple-die capability making it ideal in a variety of

power applications. With these improvements,

multiple devices can be used in an application with

dramatically reduced board space. The package is

designed for vapor phase, infra red, or wave soldering

techniques.

S O -8

Absolute Maximum Ratings

Max.

Parameter

N-Channel

P-Channel

-55

Units

V_DS

Drain-Source Voltage

4.7

3.8

I_D@ T_A= 25°C

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

-3.4

I_D@ T_A= 70°C

-2.7

I_DM

-27

P_D@T_A= 25°C

P_D@T_A= 70°C

Maximum Power Dissipation ꢀ

Single Pulse Avalanche Energy

Avalanche Current

2.0

1.3

E_AS

114

-3.4

I_AR

4.7

E_AR

Repetitive Avalanche Energy

Gate-to-Source Voltage

Peak Diode Recovery dv/dt

0.20

± 20

V/ns

°C

V_GS

dv/dt

T_J,T_STG

5.0

-5.0

Junction and Storage Temperature Range

-55 to + 150

Thermal Resistance

Parameter

Maximum Junction-to-Ambient ꢀ

Typ.

–––

Max.

62.5

Units

°C/W

R_θJA

www.irf.com

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12 3 4 5 6 7...10

中文翻译

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IRF7343 替代型号

型号	品牌	替代类型	描述	数据表
IRF7343PBF	INFINEON	类似代替	HEXFET Power MOSFET
AUIRF7343QTR	INFINEON	功能相似	Advanced Planar Technology Ultra Low On-Resistance

与IRF7343相关器件

型号	品牌	获取价格	描述	数据表
IRF7343IPBF	INFINEON	获取价格	HEXFET Power MOSFET
IRF7343PBF	INFINEON	获取价格	HEXFET Power MOSFET
IRF7343QPBF	INFINEON	获取价格	HEXFET Power MOSFET
IRF7343QPBF_10	INFINEON	获取价格	HEXFET POWER MOSFET
IRF7343QTRPBF	INFINEON	获取价格	Transistor,
IRF7343TR	INFINEON	获取价格	Power Field-Effect Transistor, 4.7A I(D), 55V, 0.05ohm, 2-Element, N-Channel and P-Channel
IRF7343TR	UMW	获取价格	种类:N+P-Channel;漏源电压（Vdss）:N: 55V P：-55V;持续漏极电
IRF7343TRPBF	INFINEON	获取价格	generation v technology
IRF734PBF	VISHAY	获取价格	Power MOSFET
IRF734S	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 450V V(BR)DSS \| 4.9A I(D) \| TO-220AB