型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRF734S | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 4.9A I(D) | TO-220AB | |
IRF734STRR | VISHAY |
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Power Field-Effect Transistor, 4.9A I(D), 450V, 1.2ohm, 1-Element, N-Channel, Silicon, Met | |
IRF7350 | INFINEON |
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Power MOSFET(Vdss=+-100V) | |
IRF7350PBF | INFINEON |
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HEXFET㈢ Power MOSFET | |
IRF7350TR | INFINEON |
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Power Field-Effect Transistor, 2.1A I(D), 100V, 0.21ohm, 2-Element, N-Channel and P-Channe | |
IRF7350TRPBF | INFINEON |
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Power Field-Effect Transistor, 2.1A I(D), 100V, 0.21ohm, 2-Element, N-Channel and P-Channe | |
IRF7351 | INFINEON |
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60V 双 N 通道 HEXFET Power MOSFET, 采用 SO-8 封装 | |
IRF7351PBF | INFINEON |
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Synchronous Rectifier MOSFET for Isolated DC-DC Converters | |
IRF7351TR | UMW |
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种类:N+N-Channel;漏源电压(Vdss):60V;持续漏极电流(Id)(在25° | |
IRF7351TRPBF | INFINEON |
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Synchronous Rectifier MOSFET for Isolated DC-DC Converters |