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IRF7353D2TR

更新时间： 2024-09-25 18:55:19
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
8页 116K
描述
Power Field-Effect Transistor, 6.5A I(D), 30V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8

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IRF7353D2TR 数据手册

 浏览型号IRF7353D2TR的Datasheet PDF文件第2页浏览型号IRF7353D2TR的Datasheet PDF文件第3页浏览型号IRF7353D2TR的Datasheet PDF文件第4页浏览型号IRF7353D2TR的Datasheet PDF文件第5页浏览型号IRF7353D2TR的Datasheet PDF文件第6页浏览型号IRF7353D2TR的Datasheet PDF文件第7页 
PD- 93809  
IRF7353D2  
FETKY MOSFET / Schottky Diode  
● Co-Pack HEXFET® Power MOSFET and  
Schottky Diode  
● Ideal For Buck Regulator Applications  
● N-Channel HEXFET power MOSFET  
● Low VF Schottky Rectifier  
● Generation 5 Technology  
● SO-8 Footprint  
1
8
7
K
K
A
VDSS = 30V  
2
A
R
DS(on) = 0.029Ω  
3
4
6
5
S
D
D
G
Schottky VF = 0.52V  
Top View  
Description  
The FETKY family of Co-Pack HEXFET® Power MOSFETs and Schottky  
diodes offers the designer an innovative, board space saving solution for  
switching regulator and power management applications. Generation 5  
HEXFET power MOSFETs utilize advanced processing techniques to  
achieve extremely low on-resistance per silicon area. Combinining this  
technology with International Rectifier's low forward drop Schottky rectifiers  
results in an extremely efficient device suitable for use in a wide variety of  
portable electronics applications.  
SO-8  
The SO-8 has been modified through a customized leadframe for enhanced  
thermal characteristics. The SO-8 package is designed for vapor phase,  
infrared or wave soldering techniques.  
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)  
Parameter  
Maximum  
Units  
ID @ TA = 25°C  
ID @ TA = 70°C  
IDM  
Continuous Drain Current ➃  
6.5  
A
5.2  
Pulsed Drain Current ➀  
Power Dissipation ➃  
52  
PD @TA = 25°C  
PD @TA = 70°C  
2.0  
W
1.3  
Linear Derating Factor  
16  
mW/°C  
V
VGS  
Gate-to-Source Voltage  
± 20  
-5.0  
dv/dt  
Peak Diode Recovery dv/dt ➁  
Junction and Storage Temperature Range  
V/ns  
°C  
TJ, TSTG  
-55 to +150  
Thermal Resistance Ratings  
Parameter  
Maximum  
Units  
RθJA  
Junction-to-Ambient ꢀ  
62.5  
°C/W  
Notes:  
➀ Repetitive rating; pulse width limited by maximum junction temperature (see figure 9)  
➁ Starting TJ = 25°C, L = 10mH, RG = 25Ω, IAS = 4.0A  
➂ ISD ≤ 4.0A, di/dt ≤ 74A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C  
➃ Pulse width ≤ 300µs; duty cycle ≤ 2%  
ꢀ Surface mounted on FR-4 board, t ≤ 10sec.  
www.irf.com  
1
11/8/99  
7353d2.p65  
1
11/8/99, 3:01 PM  
12345678

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IRF7353D2TR 替代型号

型号 品牌 替代类型 描述 数据表
RF1K49156 INTERSIL

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