是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Transferred | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.62 | 外壳连接: | DRAIN |
配置: | SINGLE | 最小漏源击穿电压: | 300 V |
最大漏极电流 (ID): | 6.1 A | 最大漏源导通电阻: | 0.75 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | 250 | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | NO |
端子面层: | MATTE TIN OVER NICKEL | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | 30 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
IRF737LC-013PBF | INFINEON | Power Field-Effect Transistor, 6.1A I(D), 300V, 0.75ohm, 1-Element, N-Channel, Silicon, Me |
获取价格 |
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IRF737LC-015PBF | INFINEON | Power Field-Effect Transistor, 6.1A I(D), 300V, 0.75ohm, 1-Element, N-Channel, Silicon, Me |
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IRF737LC-017 | INFINEON | Power Field-Effect Transistor, 6.1A I(D), 300V, 0.75ohm, 1-Element, N-Channel, Silicon, Me |
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IRF737LC-018 | INFINEON | Power Field-Effect Transistor, 6.1A I(D), 300V, 0.75ohm, 1-Element, N-Channel, Silicon, Me |
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IRF737LC-018PBF | INFINEON | Power Field-Effect Transistor, 6.1A I(D), 300V, 0.75ohm, 1-Element, N-Channel, Silicon, Me |
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IRF737LC-019 | INFINEON | Power Field-Effect Transistor, 6.1A I(D), 300V, 0.75ohm, 1-Element, N-Channel, Silicon, Me |
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